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MW7IC2750NBR1

更新时间： 2024-09-24 05:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频微波高功率电源
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25页 783K
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Document Number: MW7IC2750N  
Rev. 0, 5/2008  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
MW7IC2750NR1  
MW7IC2750GNR1  
MW7IC2750NBR1  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed for WiMAX base station applications with frequencies up to  
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class  
AB and Class C amplifier applications.  
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,  
P
out = 8 Watts Avg., f = 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts,  
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability  
on CCDF.  
2700 MHz, 8 W AVG., 28 V  
WiMAX  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Power Gain — 26 dB  
Power Added Efficiency — 17%  
Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF  
ACPR @ 8.5 MHz Offset — -49 dBc in 1 MHz Channel Bandwidth  
Driver Applications  
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,  
CASE 1618-02  
TO-270 WB-14  
PLASTIC  
P
out = 4 Watts Avg., f = 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 10 MHz  
Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on  
CCDF.  
Power Gain — 26 dB  
Power Added Efficiency — 11%  
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF  
ACPR @ 8.5 MHz Offset — -57 dBc in 1 MHz Channel Bandwidth  
MW7IC2750NR1  
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 50 Watts CW  
CASE 1621-02  
TO-270 WB-14 GULL  
PLASTIC  
Output Power  
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 80 W CW  
MW7IC2750GNR1  
Pout  
• Pout @ 1 dB Compression Point w 50 Watts CW  
Features  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
and Common Source Parameters  
CASE 1617-02  
TO-272 WB-14  
PLASTIC  
• On-Chip Matching (50 Ohm Input, DC Blocked)  
• Integrated Quiescent Current Temperature Compensation with  
MW7IC2750NBR1  
Enable/Disable Function (1)  
• Integrated ESD Protection  
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation  
• 225°C Capable Plastic Package  
• RoHS Compliant  
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
V
DS1  
V
GS2  
1
2
V
3
4
5
6
7
GS1  
NC  
NC  
14  
13  
RF /V  
out DS2  
V
DS1  
RF  
RF  
in  
in  
NC  
NC  
RF  
RF /V  
out DS2  
in  
8
9
RF /V  
out DS2  
V
V
V
10  
11  
12  
GS1  
GS2  
DS1  
V
V
GS1  
GS2  
Quiescent Current  
Temperature Compensation  
(1)  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current  
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1977 or AN1987.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  
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