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MW7IC3825NR1 PDF预览

MW7IC3825NR1

更新时间： 2024-01-07 02:59:41
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 放大器射频微波功率放大器高功率电源
页数 文件大小 规格书
23页 809K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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MW7IC3825NR1 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：FLNG,.67"H.SPACE
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.75风险等级：5.64
Is Samacsys：N特性阻抗：50 Ω
构造：COMPONENT增益：21 dB
最大输入功率 (CW)：45 dBmJESD-609代码：e3
功能数量：1最大工作频率：3600 MHz
最小工作频率：3400 MHz封装主体材料：PLASTIC/EPOXY
封装等效代码：FLNG,.67"H.SPACE电源：28 V
射频/微波设备类型：NARROW BAND HIGH POWER子类别：RF/Microwave Amplifiers
端子面层：Matte Tin (Sn)最大电压驻波比：10
Base Number Matches：1

MW7IC3825NR1 数据手册

 浏览型号MW7IC3825NR1的Datasheet PDF文件第2页浏览型号MW7IC3825NR1的Datasheet PDF文件第3页浏览型号MW7IC3825NR1的Datasheet PDF文件第4页浏览型号MW7IC3825NR1的Datasheet PDF文件第5页浏览型号MW7IC3825NR1的Datasheet PDF文件第6页浏览型号MW7IC3825NR1的Datasheet PDF文件第7页 
Document Number: MW7IC3825N  
Rev. 0, 11/2008  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MW7IC3825N wideband integrated circuit is designed with on-chip  
matching that makes it usable from 3400 - 3600 MHz. This multi - stage  
structure is rated for 26 to 32 Volt operation and covers all typical cellular  
base station modulations.  
MW7IC3825NR1  
MW7IC3825GNR1  
MW7IC3825NBR1  
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 230 mA,  
P
out = 5 Watts Avg., f = 3600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,  
3400-3600 MHz, 5 W AVG., 28 V  
WiMAX  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability  
on CCDF.  
Power Gain — 25 dB  
Power Added Efficiency — 15%  
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF  
ACPR @ 8.5 MHz Offset — -48 dBc in 1 MHz Channel Bandwidth  
Driver Applications  
CASE 1886-01  
TO-270 WB-16  
PLASTIC  
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 190 mA, IDQ2 = 230 mA,  
P
out = 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM 3/4,  
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%  
Probability on CCDF.  
MW7IC3825NR1  
Power Gain — 23.5 dB  
Power Added Efficiency — 3.5%  
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF  
ACPR @ 8.5 MHz Offset — -55 dBc in 1 MHz Channel Bandwidth  
CASE 1887-01  
TO-270 WB-16 GULL  
PLASTIC  
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW  
Output Power  
MW7IC3825GNR1  
• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 0 to 44 dBm CW Pout  
• Typical Pout @ 1 dB Compression Point ] 30 Watts CW  
Features  
• 100% PAR Tested for Guaranteed Output Power Capability  
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
and Common Source S-Parameters  
MW7IC3825NBR1  
• On-Chip Matching (50 Ohm Input, DC Blocked)  
• Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function (1)  
• Integrated ESD Protection  
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation  
• 225°C Capable Plastic Package  
• RoHS Compliant  
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel  
GND  
V
1
2
3
4
5
16  
15  
GND  
NC  
DS1  
V
GS2  
GS1  
NC  
V
V
DS1  
RF  
6
14  
RF /V  
out DS2  
in  
RF  
RF /V  
out DS2  
in  
7
8
9
10  
NC  
V
V
GS1  
GS2  
13  
12  
NC  
GND  
V
GND  
DS1  
V
V
GS1  
GS2  
11  
Quiescent Current  
Temperature Compensation  
(1)  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or AN1987.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  
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