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MW7IC2725GNR1 PDF预览

MW7IC2725GNR1

更新时间: 2024-02-15 06:34:32
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 放大器射频微波功率放大器高功率电源
页数 文件大小 规格书
24页 809K
描述
RF LDMOS Wideband Integrated Power Amplifiers

MW7IC2725GNR1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLNG,.67"H.SPACE
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.63
特性阻抗:50 Ω构造:COMPONENT
增益:25.5 dB最大输入功率 (CW):22 dBm
JESD-609代码:e3功能数量:1
最大工作频率:2700 MHz最小工作频率:2300 MHz
封装主体材料:PLASTIC/EPOXY封装等效代码:FLNG,.67"H.SPACE
电源:28 V射频/微波设备类型:NARROW BAND HIGH POWER
子类别:RF/Microwave Amplifiers技术:MOS
端子面层:Matte Tin (Sn)最大电压驻波比:10
Base Number Matches:1

MW7IC2725GNR1 数据手册

 浏览型号MW7IC2725GNR1的Datasheet PDF文件第2页浏览型号MW7IC2725GNR1的Datasheet PDF文件第3页浏览型号MW7IC2725GNR1的Datasheet PDF文件第4页浏览型号MW7IC2725GNR1的Datasheet PDF文件第5页浏览型号MW7IC2725GNR1的Datasheet PDF文件第6页浏览型号MW7IC2725GNR1的Datasheet PDF文件第7页 
Document Number: MW7IC2725N  
Rev. 2, 10/2008  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
MW7IC2725NR1  
MW7IC2725GNR1  
MW7IC2725NBR1  
The MW7IC2725N wideband integrated circuit is designed with on-chip  
matching that makes it usable from 2300 - 2700 MHz. This multi - stage  
structure is rated for 26 to 32 Volt operation and covers all typical cellular  
base station modulations.  
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA,  
Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,  
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%  
Probability on CCDF.  
2500-2700 MHz, 4 W AVG., 28 V  
WiMAX  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
Power Gain — 28.5 dB  
Power Added Efficiency — 17%  
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF  
ACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth  
Driver Applications  
CASE 1886-01  
TO-270 WB-16  
PLASTIC  
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA,  
Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,  
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%  
Probability on CCDF.  
MW7IC2725NR1  
Power Gain — 27.8 dB  
Power Added Efficiency — 3.2%  
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF  
ACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth  
CASE 1887-01  
TO-270 WB-16 GULL  
PLASTIC  
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, Pout = 25 Watts  
CW  
MW7IC2725GNR1  
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW  
Pout  
Typical Pout @ 1 dB Compression Point ] 25 Watts CW  
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
Features  
100% PAR Tested for Guaranteed Output Power Capability  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
MW7IC2725NBR1  
and Common Source S-Parameters  
On-Chip Matching (50 Ohm Input, DC Blocked)  
Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function (1)  
Integrated ESD Protection  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
GND  
V
NC  
NC  
NC  
1
2
3
4
5
16  
15  
GND  
NC  
DS1  
V
DS1  
RF  
6
14  
RF /V  
out DS2  
in  
7
8
9
10  
NC  
RF  
RF /V  
out DS2  
in  
V
V
GS1  
GS2  
13  
12  
NC  
GND  
V
GND  
DS1  
V
GS1  
V
GS2  
V
DS1  
11  
Quiescent Current  
Temperature Compensation  
(1)  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current  
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977  
or AN1987.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  

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