Document Number: MW7IC2750N
Rev. 3, 3/2011
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
The MW7IC2750N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2300--2700 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,
Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
2500--2700 MHz, 8 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Power Gain — 26 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --49 dBc in 1 MHz Channel Bandwidth
•
•
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Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW
CASE 1618--02
TO--270 WB--14
PLASTIC
Output Power (3 dB Input Overdrive from Rated Pout
)
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 W CW
Pout
Typical Pout @ 1 dB Compression Point ≃ 50 Watts CW
MW7IC2750NR1
Driver Applications
•
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,
Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
Power Gain — 26 dB
MW7IC2750GNR1
Power Added Efficiency — 11%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --57 dBc in 1 MHz Channel Bandwidth
Features
CASE 1617--02
TO--272 WB--14
PLASTIC
•
•
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
MW7IC2750NBR1
•
•
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
•
•
•
•
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Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
V
1
2
DS1
GS2
V
V
3
GS1
14
13
RF /V
out DS2
NC
NC
in
in
4
5
V
DS1
RF
RF
6
7
8
NC
RF
RF /V
out DS2
in
RF /V
out DS2
NC
9
V
10
11
12
GS1
GS2
DS1
V
V
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
(1)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.
© Freescale Semiconductor, Inc., 2008, 2010--2011. All rights reserved.
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
RF Device Data
Freescale Semiconductor
1