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MW7IC2220NBR1 PDF预览

MW7IC2220NBR1

更新时间: 2024-01-29 06:16:33
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 放大器射频微波功率放大器高功率电源
页数 文件大小 规格书
27页 1073K
描述
RF LDMOS Wideband Integrated Power Amplifiers

MW7IC2220NBR1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLNG,.8''H SPACE
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.63
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:29 dB
最大输入功率 (CW):20 dBmJESD-609代码:e3
功能数量:1最大工作频率:2200 MHz
最小工作频率:2000 MHz最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:FLNG,.8''H SPACE
电源:28 V射频/微波设备类型:NARROW BAND HIGH POWER
子类别:RF/Microwave Amplifiers技术:MOS
端子面层:Matte Tin (Sn)最大电压驻波比:5
Base Number Matches:1

MW7IC2220NBR1 数据手册

 浏览型号MW7IC2220NBR1的Datasheet PDF文件第2页浏览型号MW7IC2220NBR1的Datasheet PDF文件第3页浏览型号MW7IC2220NBR1的Datasheet PDF文件第4页浏览型号MW7IC2220NBR1的Datasheet PDF文件第5页浏览型号MW7IC2220NBR1的Datasheet PDF文件第6页浏览型号MW7IC2220NBR1的Datasheet PDF文件第7页 
Document Number: MW7IC2220N  
Rev. 0, 9/2008  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MW7IC2220N wideband integrated circuit is designed with on-chip  
matching that makes it usable from 2000 to 2200 MHz. This multi-stage  
structure is rated for 24 to 32 Volt operation and covers all typical cellular base  
station modulation formats including TD-SCDMA.  
MW7IC2220NR1  
MW7IC2220GNR1  
MW7IC2220NBR1  
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA,  
IDQ2 = 300 mA, Pout = 2 Watts Avg., Full Frequency Band, Channel  
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability  
on CCDF.  
2110-2170 MHz, 2 W Avg., 28 V  
SINGLE W-CDMA  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
Power Gain — 31 dB  
Power Added Efficiency — 13%  
ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth  
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW  
CASE 1886-01  
TO-270 WB-16  
PLASTIC  
Output Power  
Typical Pout @ 1 dB Compression Point ' 20 Watts CW  
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 Watts  
MW7IC2220NR1  
CW Pout  
.
Features  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
CASE 1887-01  
TO-270 WB-16 GULL  
PLASTIC  
and Common Source Scattering S-Parameters  
On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)  
Integrated Quiescent Current Temperature Compensation with Enable/  
MW7IC2220GNR1  
Disable Function (1)  
Integrated ESD Protection  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
MW7IC2220NBR1  
1
2
3
4
5
GND  
V
16  
15  
GND  
NC  
DS1  
NC  
V
NC  
NC  
DS1  
RF /V  
out DS2  
6
14  
RF  
in  
RF  
RF /V  
out DS2  
in  
7
8
9
10  
NC  
GS1  
GS2  
DS1  
V
V
V
V
GS1  
V
GS2  
V
DS1  
Quiescent Current  
Temperature Compensation  
13  
12  
NC  
(1)  
11  
GND  
GND  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  

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