Datasheet > MW6S010NR1_09

MW6S010NR1_09

更新时间： 2024-02-14 13:27:58

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
20页	730K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MW6S010NR1_09 数据手册

Document Number: MW6S010N

Rev. 5, 6/2009

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class A or Class AB base station applications with frequencies

up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

amplifier applications.

MW6S010NR1

MW6S010GNR1

• Typical Two-Tone Performance at 960 MHz: V_DD= 28 Volts, I_DQ= 125 mA,

P_out= 10 Watts PEP

Power Gain — 18 dB

Drain Efficiency — 32%

IMD — -37 dBc

450-1500 MHz, 10 W, 28 V

LATERAL N-CHANNEL

BROADBAND RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip RF Feedback for Broadband Stability

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1265-09, STYLE 1

TO-270-2

PLASTIC

MW6S010NR1

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

CASE 1265A-03, STYLE 1

TO-270-2 GULL

PLASTIC

MW6S010GNR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 10 W PEP

2.85

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MW6S010NR1 MW6S010GNR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

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