Datasheet > MW6S010

MW6S010

更新时间： 2024-01-07 06:52:36

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	541K
描述
RF Power Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MW6S010 数据手册

Document Number: MW6S010

Rev. 1, 5/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class A or Class AB base station applications with frequencies

up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

amplifier applications.

MW6S010NR1

MW6S010GNR1

MW6S010MR1

MW6S010GMR1

• Typical Two-Tone Performance @ 960 MHz, V_DD= 28 Volts, I_DQ

125 mA, P_out= 10 Watts PEP

Power Gain — 18 dB

Drain Efficiency — 32%

IMD — -37 dBc

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW

Output Power

450-1500 MHz, 10 W, 28 V

LATERAL N-CHANNEL

BROADBAND RF POWER MOSFETs

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip RF Feedback for Broadband Stability

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

CASE 1265-08, STYLE 1

TO-270-2

PLASTIC

MW6S010NR1(MR1)

CASE 1265A-02, STYLE 1

TO-270-2 GULL

PLASTIC

MW6S010GNR1(GMR1)

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

61.4

0.35

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +175

200

°C

stg

Table 2. Thermal Characteristics

(1.2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 10 W PEP

2.85

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

下载PDF

与MW6S010相关器件

型号	品牌	获取价格	描述	数据表
MW6S010GMR1	FREESCALE	获取价格	RF Power Field Effect Transistor
MW6S010GNR1	FREESCALE	获取价格	RF Power Field Effect Transistor
MW6S010MR1	FREESCALE	获取价格	RF Power Field Effect Transistor
MW6S010NR1	FREESCALE	获取价格	RF Power Field Effect Transistor
MW6S010NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MW7IC008NT1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MW7IC008NT1_11	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier Stable into a 5:1 VSWR. All Spurs Below --60
MW7IC18100GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC18100NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC18100NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers

与MW6S010相关文章

LM317T数据手册解读：产品特性、应用、封装与引脚详解
2024-06-14

8
一文带你了解?DB3二极管好坏判断、参数信息、替代推荐
2024-06-14

12
LM358DR数据手册：引脚说明、电气参数及替换型号推荐
2024-06-14

6
OP07CP数据手册解读：引脚信息、电子参数
2024-06-14

6

产品中心

服务支持

精选活动

关于我们

帮助中心

MW6S010

MW6S010 数据手册

与MW6S010相关器件

与MW6S010相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MW6S010

MW6S010 数据手册

与MW6S010相关器件

与MW6S010相关文章

您还可以找

您在本页遇到什么问题？