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MURTA200120 PDF预览

MURTA200120

更新时间: 2024-11-09 01:09:51
品牌 Logo 应用领域
GENESIC /
页数 文件大小 规格书
4页 469K
描述
Silicon Super Fast Recovery Diode

MURTA200120 数据手册

 浏览型号MURTA200120的Datasheet PDF文件第2页浏览型号MURTA200120的Datasheet PDF文件第3页浏览型号MURTA200120的Datasheet PDF文件第4页 
MURTA20060 thru MURTA200120R  
VRRM = 600 V - 1200 V  
IF(AV) = 200 A  
Silicon Super Fast  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 600 V to 1200 V VRRM  
• Isolation Type Package  
• Electrically Isolated Base Plate  
• Not ESD Sensitive  
Heavy Three Tower Package  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MURTA200120(R)  
Parameter  
Symbol  
MURTA20060(R)  
Unit  
VRRM  
1200  
Repetitive peak reverse voltage  
600  
V
VRMS  
VDC  
Tj  
---  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
424  
V
V
1200  
600  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 100 °C  
MURTA200120(R)  
Parameter  
Symbol  
IF(AV)  
IFSM  
MURTA20060(R)  
Unit  
A
200  
Average forward current (per pkg)  
Peak forward surge current (per leg)  
200  
tp = 8.3 ms, half sine  
2000  
2000  
A
Maximum instantaneous forward  
voltage (per leg)  
VF  
I
FM = 100 A, Tj = 25 °C  
Tj = 25 °C  
2.6  
V
1.7  
Maximum instantaneous reverse  
current at rated DC blocking voltage  
(per leg)  
25  
5
25  
5
μA  
IR  
Tj = 125 °C  
mA  
IF=0.5 A, IR=1.0 A,  
Maximum reverse recovery time (per  
leg)  
Trr  
150  
110  
ns  
I
RR= 0.25 A  
Thermal characteristics  
Maximum thermal resistance, junction -  
case (per leg)  
RΘJC  
0.45  
0.45  
°C/W  
1
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/  

MURTA200120 替代型号

型号 品牌 替代类型 描述 数据表
SKMD105F12 SEMIKRON

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