Datasheet > MURTA200120R

MURTA200120R

更新时间： 2024-11-11 01:09:51

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
4页	469K
描述
Silicon Super Fast Recovery Diode

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中文翻译

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数据手册
替代型号

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MURTA200120R 数据手册

MURTA20060 thru MURTA200120R

V_RRM= 600 V - 1200 V

I_F(AV)= 200 A

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 600 V to 1200 V V_RRM

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Heavy Three Tower Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MURTA200120(R)

Parameter

Symbol

MURTA20060(R)

Unit

V_RRM

1200

Repetitive peak reverse voltage

600

V_RMS

V_DC

T_j

---

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

424

1200

600

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 100 °C

MURTA200120(R)

Parameter

Symbol

I_F(AV)

I_FSM

MURTA20060(R)

Unit

200

Average forward current (per pkg)

Peak forward surge current (per leg)

200

t_p= 8.3 ms, half sine

2000

Maximum instantaneous forward

voltage (per leg)

V_F

_FM= 100 A, T_j= 25 °C

T_j= 25 °C

2.6

1.7

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

μA

I_R

T_j= 125 °C

I_F=0.5 A, I_R=1.0 A,

Maximum reverse recovery time (per

leg)

T_rr

150

110

_RR= 0.25 A

Thermal characteristics

Maximum thermal resistance, junction -

case (per leg)

R_ΘJC

0.45

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

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中文翻译

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MURTA200120R 替代型号

型号	品牌	替代类型	描述	数据表
MSAD100-12	MICROSEMI	功能相似	Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon, CASE D1, 3 PIN

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