Datasheet > MURTA20040R

MURTA20040R

更新时间： 2024-09-22 01:09:51

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	425K
描述
Silicon Super Fast Recovery Diode

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中文翻译

获取价格

数据手册

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MURTA20040R 数据手册

MURTA20020 thru MURTA20040R

V_RRM= 200 V - 400 V

I_F(AV)= 200 A

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 200 V to 400 V V_RRM

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Heavy Three Tower Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MURTA20040(R)

Parameter

Symbol

MURTA20020(R)

Unit

V_RRM

400

Repetitive peak reverse voltage

200

V_RMS

V_DC

T_j

283

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

141

400

200

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 100 °C

MURTA20040(R)

Parameter

Symbol

I_F(AV)

I_FSM

MURTA20020(R)

Unit

200

Average forward current (per pkg)

Peak forward surge current (per leg)

200

t_p= 8.3 ms, half sine

2000

Maximum instantaneous forward

voltage (per leg)

V_F

_FM= 100 A, T_j= 25 °C

T_j= 25 °C

1.3

1.0

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

μA

I_R

T_j= 125 °C

I_F=0.5 A, I_R=1.0 A,

Maximum reverse recovery time (per

leg)

T_rr

100

_RR= 0.25 A

Thermal characteristics

Maximum thermal resistance, junction -

case (per leg)

R_ΘJC

0.45

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

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