Datasheet > MURTA300120

MURTA300120

更新时间： 2022-02-26 11:44:13

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
4页	423K
描述
Silicon Super Fast Recovery Diode

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数据手册

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MURTA300120 数据手册

MURTA30060 thru MURTA300120R

V_RRM= 600 V - 1200 V

I_F(AV)= 300 A

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 600 V to 1200 V V_RRM

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Heavy Three Tower Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MURTA300120(R)

Parameter

Symbol

MURTA30060(R)

Unit

V_RRM

1200

Repetitive peak reverse voltage

600

V_RMS

V_DC

T_j

---

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

424

1200

600

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 100 °C

MURTA300120(R)

Parameter

Symbol

I_F(AV)

I_FSM

MURTA30060(R)

Unit

300

Average forward current (per pkg)

Peak forward surge current (per leg)

300

t_p= 8.3 ms, half sine

2750

Maximum instantaneous forward

voltage (per leg)

V_F

_FM= 150 A, T_j= 25 °C

T_j= 25 °C

2.6

1.7

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

μA

I_R

T_j= 125 °C

I_F=0.5 A, I_R=1.0 A,

Maximum reverse recovery time (per

leg)

T_rr

150

_RR= 0.25 A

Thermal characteristics

Maximum thermal resistance, junction -

case (per leg)

R_ΘJC

0.40

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

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MURTA300120R	GENESIC	Silicon Super Fast Recovery Diode	获取价格
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MURTA30020R	GENESIC	Silicon Super Fast Recovery Diode	获取价格
MURTA30040	GENESIC	Silicon Super Fast Recovery Diode	获取价格
MURTA30040R	GENESIC	Silicon Super Fast Recovery Diode	获取价格
MURTA30060	GENESIC	Silicon Super Fast Recovery Diode	获取价格