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MURB1520CT-1PBF PDF预览

MURB1520CT-1PBF

更新时间: 2024-11-18 14:09:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 92K
描述
Rectifier Diode, 1 Phase, 1 Element, 15A, 200V V(RRM), Silicon, TO-262AA, LEAD FREE, TO-262, 3 PIN

MURB1520CT-1PBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Lifetime Buy零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.4
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:ULTRA FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

MURB1520CT-1PBF 数据手册

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MURB1520/MURB1520-1  
Vishay High Power Products  
Ultrafast Rectifier,  
15 A FRED PtTM  
FEATURES  
MURB1520-1  
MURB1520  
• Ultrafast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Designed and qualified for industrial level  
Base  
cathode  
2
2
DESCRIPTION/APPLICATIONS  
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance of  
forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time control,  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
1
3
1
N/C  
3
N/C  
Anode  
Anode  
D2PAK  
TO-262  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
35 ns  
15 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
V
Total device, rated VR, TC = 150 °C  
Rated VR, square wave, 20 kHz, TC = 150 °C  
15  
IFSM  
200  
A
IFM  
30  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
-
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
-
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
500  
-
Junction capacitance  
Series inductance  
CT  
LS  
55  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93939  
Revision: 24-Jun-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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