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MURB1610CT PDF预览

MURB1610CT

更新时间: 2024-11-11 20:19:23
品牌 Logo 应用领域
固锝 - GOOD-ARK 功效二极管
页数 文件大小 规格书
3页 184K
描述
Rectifier Diode, 1 Element, 16A, 100V V(RRM)

MURB1610CT 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.74
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.975 V
最大非重复峰值正向电流:120 A元件数量:1
最高工作温度:150 °C最大输出电流:16 A
最大重复峰值反向电压:100 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

MURB1610CT 数据手册

 浏览型号MURB1610CT的Datasheet PDF文件第2页浏览型号MURB1610CT的Datasheet PDF文件第3页 
MURB1605CT thru MURB1660CT  
Glass Passivated Super Fast Rectifiers  
Reverse Voltage 50 to 600 Volts Forward Current 16.0 Amperes  
Features  
‹ High Current Capability  
‹ Low Reverse Leakage  
‹ Low Forward Voltage Drop  
‹ High Current Capability  
‹ Super Fast Switching Speed For High Efficiency  
TO-263AB  
Mechanical Data  
‹ Case: TO-220AB full molded plastic package  
‹ Terminals: Lead solderable per MIL-STD-202, Method 208  
‹ Polarity: As marked  
‹ Standard packaging: Any  
‹ Weight: 0.08 ounces, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at 25oC ambient temperature unless otherwise specified.  
MURB  
1605CT  
MURB  
1610CT  
MURB  
1620CT  
MURB  
1630CT  
MURB  
1640CT  
MURB  
1660CT  
Parameter  
Symbol  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
Amps  
35  
50  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TA=90oC  
IF(AV)  
16.0  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
120.0  
Amps  
Volts  
uA  
Maximum instantaneous forward voltage at 8.0A per  
element  
0.975  
1.3  
1.5  
Maximum DC reverse current  
at rated DC blocking voltage  
@TC=25oC  
10.0  
300  
@TC=100oC  
Maximum reverse recovery time at  
nS  
trr  
35  
50  
IF=0.5A, IR=1.0A, I =0.25A  
rr  
pF  
oC/W  
oC  
Typical junction capacitance at 4.0V, 1MHz  
Typical thermal resistance  
CJ  
RθJC  
62  
3.0  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes:  
1. Pulse test: Pulse width 300 usec, Duty cycle 2%  
276  

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