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MURB1610CT-13 PDF预览

MURB1610CT-13

更新时间: 2024-11-11 04:13:59
品牌 Logo 应用领域
美台 - DIODES 整流二极管功效
页数 文件大小 规格书
3页 81K
描述
16A SURFACE MOUNT SUPER-FAST RECTIFIER

MURB1610CT-13 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.32
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.975 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

MURB1610CT-13 数据手册

 浏览型号MURB1610CT-13的Datasheet PDF文件第2页浏览型号MURB1610CT-13的Datasheet PDF文件第3页 
SPICE MODELS: MURB1610CT MURB1620CT  
MURB1610CT / MURB1620CT  
16A SURFACE MOUNT SUPER-FAST RECTIFIER  
Features  
·
·
·
·
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
E
D2PAK  
Super-Fast Recovery Times for High Efficiency  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 100A Peak  
G
H
A
Min  
Max  
Dim  
A
4
9.65  
10.69  
B
14.60 15.88  
Low Reverse Leakage Current  
J
C
0.51  
2.29  
4.37  
1.14  
1.14  
8.25  
0.30  
2.03  
2.29  
1.14  
2.79  
4.83  
1.40  
1.40  
9.25  
0.64  
2.92  
2.79  
Lead Free Finish, RoHS Compliant (Note 4)  
B
1
2
3
D
E
Mechanical Data  
G
H
M
·
·
Case: D2PAK  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
D
K
J
C
L
K
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
L
Terminals: Finish - Bright Tin. Solderable per  
MIL-STD-202, Method 208  
PIN 1  
PIN 3  
PIN 2 & 4  
M
·
·
·
Polarity: See Diagram  
All Dimensions in mm  
Marking: See Page 3  
Weight: 1.7 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
MURB1610CT  
MURB1620CT  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
70  
200  
140  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
@ TC = 125°C  
16  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
100  
A
Forward Voltage  
@ IF = 8.0A  
VFM  
IRM  
0.975  
V
5.0  
250  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA 25°C  
=
mA  
@ TA = 150°C  
trr  
CT  
Maximum Recovery Time (Note 2)  
Typical Total Capacitance (Note 3)  
30  
85  
ns  
pF  
RqJC  
Tj, TSTG  
Typical Thermal Resistance Junction to Case  
Operating and Storage Temperature Range  
1.5  
°C/W  
°C  
-65 to +150  
2
Notes: 1. Unit mounted on PC board with 5.0 mm (0.013 mm thick) copper pad as heat sink.  
2. Measured with I = 0.5A, I = 1.0A, I = 0.25A.  
F
R
rr  
3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.  
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS14005 Rev. 5 - 2  
1 of 3  
MURB1610CT/MURB1620CT  
www.diodes.com  
ã Diodes Incorporated  

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