Datasheet > MURB1520PBF_10

MURB1520PBF_10

更新时间： 2024-11-18 10:41:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	170K
描述
Ultrafast Rectifier, 8 A FRED Pt

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURB1520PBF_10 数据手册

VS-MURB1520PbF, VS-MURB1520-1PbF

Vishay High Power Products

Ultrafast Rectifier, 8 A FRED Pt^®

FEATURES

VS-MURB1520-1PbF

VS-MURB1520PbF

• Ultrafast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

Base

cathode

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Halogen-free according to IEC 61249-2-21

definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

N/C

Anode

N/C

Anode

DESCRIPTION/APPLICATIONS

D²PAK

TO-262

MUR.. series are the state of the art ultrafast recovery

rectifiers specifically designed with optimized performance

of forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time

control, guarantee the best overall performance,

ruggedness and reliability characteristics.

PRODUCT SUMMARY

These devices are intended for use in the output rectification

stage of SMPS, UPS, dc-to-dc converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

t_rr

I_F(AV)

V_R

35 ns

15 A

200 V

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

MAX.

200

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

Total device, rated V_R, T_C= 150 °C

Rated V_R, square wave, 20 kHz, T_C= 150 °C

I_FSM

200

I_FM

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 15 A

200

1.05

0.85

Forward voltage

V_F

I_R

I_F= 15 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

500

Junction capacitance

Series inductance

C_T

L_S

8.0

Measured lead to lead 5 mm from package body

Document Number: 94082

Revision: 11-Mar-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7...9

中文翻译

下载PDF

与MURB1520PBF_10相关器件

型号	品牌	获取价格	描述	数据表
MURB1520TRL	VISHAY	获取价格	Ultrafast Rectifier, 15 A FRED PtTM
MURB1520TRLPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 15A, 200V V(RRM), Silicon, D2PAK-3
MURB1520TRLPBF	VISHAY	获取价格	Ultrafast Rectifier, 15 A FRED PtTM
MURB1520TRPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 15A, 200V V(RRM), Silicon, D2PAK-3
MURB1520TRR	VISHAY	获取价格	Ultrafast Rectifier, 15 A FRED PtTM
MURB1520TRRPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 15A, 200V V(RRM), Silicon, D2PAK-3
MURB1520TRRPBF	VISHAY	获取价格	Ultrafast Rectifier, 15 A FRED PtTM
MURB1540	GOOD-ARK	获取价格	Ultrafast Recovery Planar Diode
MURB1540S	GOOD-ARK	获取价格	快恢复整流管
MURB1560L	YANGJIE	获取价格	TO-263

与MURB1520PBF_10相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

MURB1520PBF_10

MURB1520PBF_10 数据手册

与MURB1520PBF_10相关器件

与MURB1520PBF_10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MURB1520PBF_10

MURB1520PBF_10 数据手册

与MURB1520PBF_10相关器件

与MURB1520PBF_10相关文章

您还可以找

您在本页遇到什么问题？