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MURB1520CTTRRPBF PDF预览

MURB1520CTTRRPBF

更新时间: 2024-11-18 13:00:55
品牌 Logo 应用领域
威世 - VISHAY 二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
7页 115K
描述
Rectifier Diode, 1 Element, 15A, 200V V(RRM),

MURB1520CTTRRPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
最大非重复峰值正向电流:200 A元件数量:1
最高工作温度:175 °C最大输出电流:15 A
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

MURB1520CTTRRPBF 数据手册

 浏览型号MURB1520CTTRRPBF的Datasheet PDF文件第2页浏览型号MURB1520CTTRRPBF的Datasheet PDF文件第3页浏览型号MURB1520CTTRRPBF的Datasheet PDF文件第4页浏览型号MURB1520CTTRRPBF的Datasheet PDF文件第5页浏览型号MURB1520CTTRRPBF的Datasheet PDF文件第6页浏览型号MURB1520CTTRRPBF的Datasheet PDF文件第7页 
MURB1520/MURB1520-1  
Vishay High Power Products  
Ultrafast Rectifier,  
15 A FRED PtTM  
FEATURES  
MURB1520-1  
MURB1520  
• Ultrafast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Designed and qualified for industrial level  
Base  
cathode  
2
2
DESCRIPTION/APPLICATIONS  
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance of  
forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time control,  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
1
3
1
N/C  
3
N/C  
Anode  
Anode  
D2PAK  
TO-262  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
35 ns  
15 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
V
Total device, rated VR, TC = 150 °C  
Rated VR, square wave, 20 kHz, TC = 150 °C  
15  
IFSM  
200  
A
IFM  
30  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
-
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
-
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
500  
-
Junction capacitance  
Series inductance  
CT  
LS  
55  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93939  
Revision: 24-Jun-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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