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MUR1100 PDF预览

MUR1100

更新时间: 2024-11-01 22:29:47
品牌 Logo 应用领域
美微科 - MCC 整流二极管
页数 文件大小 规格书
3页 86K
描述
1 Amp Super Fast Recovery Rectifier 50 to 1000 Volts

MUR1100 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:DO-41, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.23
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-XALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MUR1100 数据手册

 浏览型号MUR1100的Datasheet PDF文件第2页浏览型号MUR1100的Datasheet PDF文件第3页 
M C C  
MUR105  
THRU  
MUR1100  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
·
·
·
High Surge Capability  
Low Forward Voltage Drop  
High Current Capability  
1 Amp Super Fast  
Recovery Rectifier  
50 to 1000 Volts  
Super Fast Switching Speed For High Efficiency  
Maximum Ratings  
·
·
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
Maximum  
Recurrent  
Maximum DC  
Blocking  
DO-41  
MCC  
Maximum  
Part Number  
Peak Reverse RMS Voltage  
Voltage  
Voltage  
MUR105  
MUR110  
MUR115  
MUR120  
MUR140  
MUR160  
MUR180  
MUR1100  
50V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
105V  
140V  
280V  
420V  
560V  
700V  
D
°
A
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Cathode  
Mark  
Average Forward  
Current  
IF(AV)  
1 A  
T = 55°C  
A
B
Peak Forward Surge  
Current  
IFSM  
35A  
8.3ms, half sine  
D
Maximum  
Instantaneous  
Forward Voltage  
MUR105-115  
MUR120-160  
MUR180-1100  
C
VF  
.975V  
1.35V  
1.75V  
I
= 1.0A;  
FM  
T = 25°C  
A
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Maximum Reverse  
Recovery Time  
MUR105-120  
DIMENSIONS  
IR  
5mA  
50mA  
T = 25°C  
T = 150°C  
A
A
INCHES  
MIN  
MM  
MIN  
DIM  
A
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
.166  
4.10  
2.00  
.70  
B
C
.080  
.028  
D
1.000  
25.40  
---  
T
rr  
45ns  
60ns  
75ns  
I =0.5A, IR=1.0A,  
F
MUR140-160  
I =0.25A  
rr  
MUR180-1100  
Typical Junction  
Capacitance  
Measured at  
1.0MHz, VR=4.0V  
CJ  
20pF  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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