MUR110GP-B

更新时间： 2024-11-25 13:11:55

品牌	Logo	应用领域
美微科 - MCC		整流二极管
页数	文件大小	规格书
3页	86K
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中文翻译

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数据手册

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MUR110GP-B 数据手册

M C C

MUR105

THRU

MUR1100

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

High Surge Capability

Low Forward Voltage Drop

High Current Capability

1 Amp Super Fast

Recovery Rectifier

50 to 1000 Volts

Super Fast Switching Speed For High Efficiency

Maximum Ratings

Operating Temperature: -50°C to +150°C

Storage Temperature: -50°C to +150°C

Maximum

Recurrent

Maximum DC

Blocking

DO-41

MCC

Maximum

Part Number

Peak Reverse RMS Voltage

Voltage

MUR105

MUR110

MUR115

MUR120

MUR140

MUR160

MUR180

MUR1100

50V

100V

150V

200V

400V

600V

800V

1000V

35V

70V

50V

100V

150V

200V

400V

600V

800V

1000V

105V

140V

280V

420V

560V

700V

Electrical Characteristics @ 25 C Unless Otherwise Specified

Cathode

Mark

Average Forward

Current

I_F(AV)

1 A

T = 55°C

Peak Forward Surge

Current

I_FSM

35A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

MUR105-115

MUR120-160

MUR180-1100

V_F

.975V

1.35V

1.75V

= 1.0A;

T = 25°C

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Maximum Reverse

Recovery Time

MUR105-120

DIMENSIONS

I_R

5mA

50mA

T = 25°C

T = 150°C

INCHES

MIN

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

.166

4.10

2.00

.70

.080

.028

1.000

25.40

---

45ns

60ns

75ns

I =0.5A, I_R=1.0A,

MUR140-160

I =0.25A

MUR180-1100

Typical Junction

Capacitance

Measured at

1.0MHz, V_R=4.0V

C_J

20pF

*Pulse Test: Pulse Width 300msec, Duty Cycle 1%

www.mccsemi.com

12 3

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