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MUR1100ERLG PDF预览

MUR1100ERLG

更新时间: 2024-02-09 17:53:38
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关PC
页数 文件大小 规格书
6页 79K
描述
SWITCHMODE Power Rectifiers

MUR1100ERLG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.14
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MUR1100ERLG 数据手册

 浏览型号MUR1100ERLG的Datasheet PDF文件第2页浏览型号MUR1100ERLG的Datasheet PDF文件第3页浏览型号MUR1100ERLG的Datasheet PDF文件第4页浏览型号MUR1100ERLG的Datasheet PDF文件第5页浏览型号MUR1100ERLG的Datasheet PDF文件第6页 
MUR180E, MUR1100E  
MUR1100E is a Preferred Device  
SWITCHMODEt  
Power Rectifiers  
Ultrafast “E” Series with High Reverse  
Energy Capability  
http://onsemi.com  
These state−of−the−art devices are designed for use in switching  
power supplies, inverters and as free wheeling diodes.  
ULTRAFAST RECTIFIERS  
1.0 AMPERES, 800−1000 VOLTS  
Features  
10 mjoules Avalanche Energy Guaranteed  
Excellent Protection Against Voltage Transients in Switching  
Inductive Load Circuits  
Ultrafast 75 Nanosecond Recovery Time  
175°C Operating Junction Temperature  
Low Forward Voltage  
Low Leakage Current  
High Temperature Glass Passivated Junction  
Reverse Voltage to 1000 V  
These are Pb−Free Devices*  
Mechanical Characteristics:  
Case: Epoxy, Molded  
PLASTIC  
AXIAL LEAD  
CASE 59  
Weight: 0.4 Gram (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Shipped in Plastic Bags; 1,000 per Bag  
Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to  
the Part Number  
MARKING DIAGRAM  
Polarity: Cathode Indicated by Polarity Band  
MAXIMUM RATINGS  
A
Rating  
Symbol  
Value  
Unit  
MUR1x0E  
YYWW G  
G
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
V
MUR180E  
800  
R
MUR1100E  
1000  
Average Rectified Forward Current (Note 1)  
(Square Wave Mounting Method #3 Per Note 3)  
I
1.0 @  
T = 95°C  
A
A
A
F(AV)  
A
= Assembly Location  
Non-Repetitive Peak Surge Current  
(Surge applied at rated load conditions,  
halfwave, single phase, 60 Hz)  
I
35  
MUR1x0E = Device Code  
x 8 or 10  
Y
FSM  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Operating Junction Temperature and Storage  
Temperature Range  
T , T  
65 to  
+175  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 3  
MUR180E/D  
 

MUR1100ERLG 替代型号

型号 品牌 替代类型 描述 数据表
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MUR1100ERL ONSEMI

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