5秒后页面跳转
MUR1100PT PDF预览

MUR1100PT

更新时间: 2024-02-16 11:10:08
品牌 Logo 应用领域
力勤 - CHENMKO 功效
页数 文件大小 规格书
2页 76K
描述
HIGH EFFICIENCY RECTIFIER

MUR1100PT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.14
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MUR1100PT 数据手册

 浏览型号MUR1100PT的Datasheet PDF文件第2页 
MUR170PT  
THRU  
CHENMKO ENTERPRISE CO.,LTD  
HIGH EFFICIENCY RECTIFIER  
MUR1100PT  
VOLTAGE RANGE 700 - 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
* Low power loss, high efficiency  
* Low leakage  
* High current capability  
* High speed switching  
DO-41  
* High current surge  
* High reliability  
* High temperature soldering guaranteed :  
260oC/10 seconds at terminals  
0.034(0.9)  
DIA.  
0.028(0.7)  
1.0(25.4)  
MIN.  
MECHANICAL DATA  
Case: JEDEC DO-41 molded plastic  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: Indicated by cathode band  
Weight: 0.35 gram  
0.205(5.2)  
0.166(4.2)  
0.107(2.7)  
DIA.  
0.080(2.0)  
1.0(25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 HZ, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
DO-41  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL  
VRRM  
UNITS  
Volts  
Volts  
Volts  
MUR170PT  
700  
MUR180PT  
800  
MUR190PT  
900  
MUR1100PT  
1000  
VRMS  
490  
560  
630  
700  
Maximum DC Blocking Voltage  
VDC  
700  
800  
900  
1000  
Maximum Average Forward Rectified Current  
IO  
1.0@TA=90oC  
Amps  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
35  
oC / W  
oC  
R
JA  
Typical thermal resistance  
52  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +175  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
MUR170PT  
MUR180PT  
MUR190PT  
MUR1100PT  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 1.0 A DC  
VF  
1.75  
10  
Maximum DC Reverse Current  
uAmps  
uAmps  
at Rated DC Blocking Voltage at TJ = 25oC  
IR  
Maximum Full Load Reverse Current Average,  
600  
75  
Full Cycle 0.375" (9.5mm) lead length at TJ = 150oC  
Maximum Reverse Recovery Time (Note)  
trr  
nSec  
2001-6  
NOTES : Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A  

与MUR1100PT相关器件

型号 品牌 获取价格 描述 数据表
MUR1100S GULFSEMI

获取价格

ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER Voltage: 50 to 1000V Current: 1.0A
MUR1100-T MCC

获取价格

Rectifier Diode,
MUR1100-TP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC, PAC
MUR1100-TP-HF MCC

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41,
MUR110F KEXIN

获取价格

Super Fast Recovery Diodes
MUR110G ONSEMI

获取价格

SWITCHMODE Power Rectifiers
MUR110GP MCC

获取价格

1.0 Amp Glass Passivated Super Fast Recovery Rectifier 50 to 600 Volts
MUR110GP LUNSURE

获取价格

1.0Amp glass passivated super fast recovery rectifier 50to600 volts
MUR110GP-A MCC

获取价格

Rectifier Diode,
MUR110GP-AP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC, PACK