Datasheet > MUN5237T1G

MUN5237T1G

更新时间： 2024-01-28 16:05:21

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	90K
描述
Bias Resistor Transistor

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MUN5237T1G 数据手册

MUN5211T1 Series

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base−emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC−70/SOT−323 package which is designed for low power

surface mount applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC−70/SOT−323 package can be soldered using wave or reflow.

The modified gull−winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel. Use the Device Number

to order the 7 inch/3000 unit reel.

PIN 2

EMITTER

(GROUND)

SC−70/SOT−323

CASE 419

• Pb−Free Packages are Available

STYLE 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Symbol

Value

Unit

Vdc

MARKING DIAGRAM

CBO

CEO

Collector Current

100

mAdc

8x M G

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

202 (Note 1)

310 (Note 2)

1.6 (Note 1) mW/°C

2.5 (Note 2)

T = 25°C

Derate above 25°C

8x = Device Code

= Date Code*

= Pb−Free Package

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Lead

618 (Note 1)

403 (Note 2)

°C/W

°C

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

280 (Note 1)

332 (Note 2)

Junction and Storage Temperature

Range

T , T

−55 to +150

stg

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 inch Pad.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 7

MUN5211T1/D

12 3 4 5 6 7...10

中文翻译

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MUN5237T1G 替代型号

型号	品牌	替代类型	描述	数据表
MUN5237T1	ONSEMI	完全替代	NPN SILICON BIAS RESISTOR TRANSISTORS
DDTC144WUA-7	DIODES	功能相似	Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI
UN9210J	PANASONIC	功能相似	Silicon NPN epitaxial planar type

与MUN5237T1G相关器件

型号	品牌	获取价格	描述	数据表
MUN5238	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 2.2 k, R2 = k
MUN5240	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47k R2 = k
MUN5240T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47k R2 = k
MUN5241	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 100 k R2 = k
MUN5241T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 100 k R2 = k
MUN52XXDW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN52XXDW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN52XXT1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN52XXT1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5311DW	WEITRON	获取价格	Dual Bias Resistor Transistor NPNPNP Silicon

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