是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | BGA, BGA272,20X20,50 |
针数: | 272 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 其他特性: | USER CONFIGURABLE AS 16K X 68 |
备用内存宽度: | 136 | JESD-30 代码: | R-PBGA-B272 |
JESD-609代码: | e0 | 内存密度: | 1114112 bit |
内存集成电路类型: | CONTENT ADDRESSABLE SRAM | 内存宽度: | 272 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 272 | 字数: | 4096 words |
字数代码: | 4000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 4KX272 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA272,20X20,50 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8,3.3 V | 认证状态: | Not Qualified |
子类别: | SRAMs | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
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1W, Bypass-Capacitor-less Audio Amplifier with Internal Selectable Gain | |
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LOW CURRENT HIGH EFFICIENCY LED | |
MUB32DH | MICRO-ELECTRONICS |
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LOW CURRENT HIGH EFFICIENCY LED | |
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LOW CURRENT HIGH EFFICIENCY RED LED LAMP | |
MUB35DH-5 | MICRO-ELECTRONICS |
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Single Color LED, High Efficiency Red, 3mm | |
MUB51DH | MICRO-ELECTRONICS |
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LOW CURRENTHIGH EFFICIENCY LED | |
MUB81DH | MICRO-ELECTRONICS |
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LOW CURRENT HIGH EFFICIENCY LED | |
MUB81TH | MICRO-ELECTRONICS |
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Single Color LED, High Efficiency Red, 4.9mm | |
MUBW10-06A6 | IXYS |
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Converter - Brake - Inverter Module (CBI1) | |
MUBW10-06A6K | IXYS |
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Converter - Brake - Inverter Module NPT IGBT Preliminary data |