Datasheet > MTSF2P02HD

MTSF2P02HD

更新时间： 2024-09-20 22:29:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	240K
描述
SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM

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MTSF2P02HD 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.4	其他特性：	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	2.4 A	最大漏源导通电阻：	0.09 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
功耗环境最大值：	0.78 W	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MTSF2P02HD 数据手册

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by MTSF2P02HD/D

SEMICONDUCTOR TECHNICAL DATA

Medium Power Surface Mount Products

Motorola Preferred Device

SINGLE TMOS

POWER FET

3.0 AMPERES

20 VOLTS

Micro8 devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process to

achieve lowest possible on–resistance per silicon area. They are

capable of withstanding high energy in the avalanche and commuta-

tion modes and the drain–to–source diode has a very low reverse

recovery time. Micro8 devices are designed for use in low voltage,

high speed switching applications where power efficiency is important.

Typical applications are dc–dc converters, and power management in

portable and battery powered products such as computers, printers,

cellular and cordless phones. They can also be used for low voltage

motor controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the guesswork

in designs where inductive loads are switched and offer additional

safety margin against unexpected voltage transients.

= 0.090 OHM

DS(on)

CASE 846A–02, Style 1

Micro8

•

Miniature Micro8 Surface Mount Package — Saves Board Space

Extremely Low Profile (<1.1mm) for thin applications such as

PCMCIA cards

•

Ultra Low R

Battery Life

Provides Higher Efficiency and Extends

DS(on)

Drain

Source

Gate

•

Logic Level Gate Drive — Can Be Driven by Logic ICs

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

Specified at Elevated Temperature

DSS

Top View

Avalanche Energy Specified

Mounting Information for Micro8 Package Provided

DEVICE MARKING

ORDERING INFORMATION

Device

Reel Size

Tape Width

12 mm embossed tape

Quantity

4000 units

MTSF2P02HDR2

13″

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International

Rectifier. Thermal Clad is a trademark of the Bergquist Company.

REV 6

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7...12

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与MTSF2P02HD相关器件

型号	品牌	获取价格	描述	数据表
MTSF2P02HDR2	MOTOROLA	获取价格	2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 846A-02, MICRO-8
MTSF2P03HD	MOTOROLA	获取价格	SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM
MTSF3203	MOTOROLA	获取价格	SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM
MTSF3203R2	MOTOROLA	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MTSF3N02HD	MOTOROLA	获取价格	SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
MTSF3N02HDR2	ONSEMI	获取价格	4000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MICROPAK-8
MTSF3N02HDR2	MOTOROLA	获取价格	3800mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MTSF3N03HD	MOTOROLA	获取价格	SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
MTSF3N03HDR2	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
MTSF3N03HDR2	ROCHESTER	获取价格	3800mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MICRO-8

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