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MTSF3N03HDR2 PDF预览

MTSF3N03HDR2

更新时间： 2024-09-21 14:54:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 局域网开关光电二极管晶体管
页数 文件大小 规格书
12页 231K
描述
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIATURE, CASE 846A-02, MICRO-8

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MTSF3N03HDR2 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, S-PDSO-G8Reach Compliance Code：unknown
风险等级：5.83其他特性：LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：3.7 A最大漏极电流 (ID)：3.7 A
最大漏源导通电阻：0.04 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：S-PDSO-G8JESD-609代码：e0
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
功耗环境最大值：0.78 W最大功率耗散 (Abs)：1.8 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTSF3N03HDR2 数据手册

 浏览型号MTSF3N03HDR2的Datasheet PDF文件第2页浏览型号MTSF3N03HDR2的Datasheet PDF文件第3页浏览型号MTSF3N03HDR2的Datasheet PDF文件第4页浏览型号MTSF3N03HDR2的Datasheet PDF文件第5页浏览型号MTSF3N03HDR2的Datasheet PDF文件第6页浏览型号MTSF3N03HDR2的Datasheet PDF文件第7页 
Order this document  
by MTSF3N03HD/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
SINGLE TMOS  
POWER MOSFET  
3.8 AMPERES  
30 VOLTS  
Micro8 devices are an advanced series of power MOSFETs  
which utilize Motorola’s High Cell Density HDTMOS process to  
achieve lowest possible on–resistance per silicon area. They are  
capable of withstanding high energy in the avalanche and commuta-  
tion modes and the drain–to–source diode has a very low reverse  
recovery time. Micro8 devices are designed for use in low voltage,  
high speed switching applications where power efficiency is important.  
Typical applications are dc–dc converters, and power management in  
portable and battery powered products such as computers, printers,  
cellular and cordless phones. They can also be used for low voltage  
motor controls in mass storage products such as disk drives and tape  
drives. The avalanche energy is specified to eliminate the guesswork  
in designs where inductive loads are switched and offer additional  
safety margin against unexpected voltage transients.  
R
= 0.040 OHM  
DS(on)  
D
CASE 846A–02, Style 1  
Micro8  
•
•
Miniature Micro8 Surface Mount Package — Saves Board Space  
Extremely Low Profile (<1.1 mm) for thin applications such as  
PCMCIA cards  
G
•
Ultra Low R  
Battery Life  
Provides Higher Efficiency and Extends  
DS(on)  
1
2
3
4
8
7
6
5
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
S
•
•
•
•
•
•
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
I
Specified at Elevated Temperature  
DSS  
Top View  
Avalanche Energy Specified  
Mounting Information for Micro8 Package Provided  
DEVICE MARKING  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
12 mm embossed tape  
Quantity  
4000 units  
AA  
MTSF3N03HDR2  
13″  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International  
Rectifier. Thermal Clad is a trademark of the Bergquist Company.  
REV 3  
Motorola, Inc. 1997  
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