Datasheet > MTSF2P03HD

MTSF2P03HD

更新时间： 2024-11-09 22:29:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
12页	248K
描述
SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MTSF2P03HD 数据手册

Order this document

by MTSF2P03HD/D

SEMICONDUCTOR TECHNICAL DATA

Medium Power Surface Mount Products

Motorola Preferred Device

SINGLE TMOS

POWER MOSFET

2.7 AMPERES

30 VOLTS

Micro8 devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process to

achieve lowest possible on–resistance per silicon area. They are

capable of withstanding high energy in the avalanche and commuta-

tion modes and the drain–to–source diode has a very low reverse

recovery time. Micro8 devices are designed for use in low voltage,

high speed switching applications where power efficiency is important.

Typical applications are dc–dc converters, and power management in

portable and battery powered products such as computers, printers,

cellular and cordless phones. They can also be used for low voltage

motor controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the guesswork

in designs where inductive loads are switched and offer additional

safety margin against unexpected voltage transients.

= 0.090 OHM

DS(on)

CASE 846A–02, Style 1

Micro8

•

Miniature Micro8 Surface Mount Package — Saves Board Space

Extremely Low Profile (<1.1 mm) for thin applications such as

PCMCIA cards

•

Ultra Low R

Battery Life

Provides Higher Efficiency and Extends

DS(on)

Drain

Source

Gate

•

Logic Level Gate Drive — Can Be Driven by Logic ICs

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

Specified at Elevated Temperature

DSS

Top View

Avalanche Energy Specified

Mounting Information for Micro8 Package Provided

DEVICE MARKING

ORDERING INFORMATION

Device

Reel Size

Tape Width

12 mm embossed tape

Quantity

4000 units

MTSF2P03HDR2

13″

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International

Rectifier. Thermal Clad is a trademark of the Bergquist Company.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7...12

中文翻译

下载PDF

与MTSF2P03HD相关器件

型号	品牌	获取价格	描述	数据表
MTSF3203	MOTOROLA	获取价格	SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM
MTSF3203R2	MOTOROLA	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MTSF3N02HD	MOTOROLA	获取价格	SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
MTSF3N02HDR2	ONSEMI	获取价格	4000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MICROPAK-8
MTSF3N02HDR2	MOTOROLA	获取价格	3800mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MTSF3N03HD	MOTOROLA	获取价格	SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
MTSF3N03HDR2	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
MTSF3N03HDR2	ROCHESTER	获取价格	3800mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MICRO-8
MTSH310027-2.500MHZ	MMD	获取价格	Oscillator,
MTSH310048-75.000MHZ	MMD	获取价格	Oscillator,

与MTSF2P03HD相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

24
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

24
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

50
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

40

产品中心

服务支持

精选活动

关于我们

帮助中心

MTSF2P03HD

MTSF2P03HD 数据手册

与MTSF2P03HD相关器件

与MTSF2P03HD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MTSF2P03HD

MTSF2P03HD 数据手册

与MTSF2P03HD相关器件

与MTSF2P03HD相关文章

您还可以找

您在本页遇到什么问题？