5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> MTP5N40E
MTP5N40E PDF预览

MTP5N40E

更新时间： 2024-11-08 22:45:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 261K
描述
TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

阅读下载

中文翻译

获取价格

MTP5N40E 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.28
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：290 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：400 V最大漏极电流 (Abs) (ID)：5 A
最大漏极电流 (ID)：5 A最大漏源导通电阻：1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：75 W最大脉冲漏极电流 (IDM)：12 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON

MTP5N40E 数据手册

 浏览型号MTP5N40E的Datasheet PDF文件第2页浏览型号MTP5N40E的Datasheet PDF文件第3页浏览型号MTP5N40E的Datasheet PDF文件第4页浏览型号MTP5N40E的Datasheet PDF文件第5页浏览型号MTP5N40E的Datasheet PDF文件第6页浏览型号MTP5N40E的Datasheet PDF文件第7页 
Order this document  
by MTP5N40E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
5.0 AMPERES  
400 VOLTS  
This advanced high voltage TMOS E–FET is designed to  
withstand high energy in the avalanche mode and switch efficiently.  
This new high energy device also offers a drain–to–source diode  
with fast recovery time. Designed for high voltage, high speed  
switching applications such as power supplies, PWM motor  
controls and other inductive loads, the avalanche energy capability  
is specified to eliminate the guesswork in designs where inductive  
loads are switched and offer additional safety margin against  
unexpected voltage transients.  
R
= 1.0 OHM  
DS(on)  
•
Avalanche Energy Capability Specified at Elevated  
Temperature  
D
•
•
Low Stored Gate Charge for Efficient Switching  
Internal Source–to–Drain Diode Designed to Replace External  
Zener Transient Suppressor — Absorbs High Energy in the  
Avalanche Mode  
G
•
Source–to–Drain Diode Recovery Time Comparable to Discrete  
Fast Recovery Diode  
S
CASE 221A–06, Style 5  
TO–220AB  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
400  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
400  
Gate–Source Voltage — Continuous  
Gate–Source Voltage — Non–repetitive  
V
±20  
±40  
Vdc  
Vpk  
GS  
V
GSM  
Drain Current — Continuous  
Drain Current — Pulsed  
I
5.0  
12  
Adc  
D
I
DM  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
75  
0.6  
Watts  
W/°C  
C
Operating and Storage Temperature Range  
T , T  
–55 to 150  
°C  
J
stg  
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T < 150°C)  
J
Single Pulse Drain–to–Source Avalanche Energy — T = 25°C  
W
W
(1)  
(2)  
290  
46  
7.4  
mJ  
J
DSR  
Single Pulse Drain–to–Source Avalanche Energy — T = 100°C  
J
Repetitive Pulse Drain–to–Source Avalanche Energy  
DSR  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient°  
R
R
1.67  
62.5  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
(1) V  
DD  
= 50 V, I = 5.0 A  
D
(2) Pulse Width and frequency is limited by T (max) and thermal response  
J
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  
12345678

中文翻译

下载PDF

MTP5N40E 替代型号

型号 品牌 替代类型 描述 数据表
STP7NB40 STMICROELECTRONICS

功能相似

 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
BUZ60 INFINEON

功能相似

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

与MTP5N40E相关器件

型号 品牌 获取价格 描述 数据表
MTP5N40EA MOTOROLA

获取价格

 		5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP5N40EAF MOTOROLA

获取价格

 		Power Field-Effect Transistor, 5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP5N40EC MOTOROLA

获取价格

 		Power Field-Effect Transistor, 5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP5N40ED1 MOTOROLA

获取价格

 		5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP5N40EL MOTOROLA

获取价格

 		5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP5N40EN MOTOROLA

获取价格

 		Power Field-Effect Transistor, 5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP5N40ES MOTOROLA

获取价格

 		5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP5N40EU MOTOROLA

获取价格

 		5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP5N40EU2 MOTOROLA

获取价格

 		Power Field-Effect Transistor, 5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP5N40EW MOTOROLA

获取价格

 		Power Field-Effect Transistor, 5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o

与MTP5N40E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证