是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.33 | Is Samacsys: | N |
其他特性: | LEADFORM OPTIONS ARE AVAILABLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 180 V |
最大漏极电流 (Abs) (ID): | 5 A | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 75 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 75 W |
最大功率耗散 (Abs): | 75 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 150 ns |
最大开启时间(吨): | 90 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP5P25 | MOTOROLA |
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POWER FIELD EFFECT TRANSISTOR | |
MTP605K030P1D | CDE |
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Tantalum Capacitor, Polarized, Tantalum (wet), 30V, 10% +Tol, 10% -Tol, 6uF, Through Hole | |
MTP606K020P1B | CDE |
获取价格 |
CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 20V, 60uF, THROUGH HOLE MOUNT, AXIAL LEADED | |
MTP606M020P1B | CDE |
获取价格 |
CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 20V, 60uF, THROUGH HOLE MOUNT, AXIAL LEADED | |
MTP60N05 | MOTOROLA |
获取价格 |
TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM | |
MTP60N05HDL | MOTOROLA |
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TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM | |
MTP60N06 | MOTOROLA |
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TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM | |
MTP60N06HD | MOTOROLA |
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TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM | |
MTP60N10E7L | MOTOROLA |
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60A, 100V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | |
MTP610G | ADAM-TECH |
获取价格 |
MODULAR TELEPHONE PLUGS |