Datasheet > MTP55N06

MTP55N06

更新时间： 2024-09-20 22:17:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
6页	146K
描述
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

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SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, PWM motor controls and

other inductive loads, the avalanche energy capability is specified

to eliminate the guesswork in designs where inductive loads are

switched and offer additional safety margin against unexpected

voltage transients.

55 AMPERES

60 VOLTS

= 18 mΩ

DS(on)

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Low Stored Gate Charge for Efficient Switching

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor–Absorbs High Energy in the

Avalanche Mode

ESD Protected. Designed to Typically Withstand 400 V

Machine Model and 4000 V Human Body Model.

•

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–to–Source Voltage — Continuous

Gate–to–Source Voltage — Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous @ T = 25°C

35.5

165

Adc

Apk

Drain Current — Continuous @ T = 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

Derate above 25°C

113

0.91

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

454

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V

= 60 Vdc, V

= 10 Vdc, Peak I = 55 Apk, L = 0.3 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction–to–Case

Thermal Resistance — Junction–to–Ambient

1.1

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

REV 1

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6

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与MTP55N06相关器件

型号	品牌	获取价格	描述	数据表
MTP55N06Z	MOTOROLA	获取价格	TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
MTP55N10EL	MOTOROLA	获取价格	55A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP5614N6	CYSTEKEC	获取价格	P-Channel Enhancement Mode MOSFET
MTP5N05	NJSEMI	获取价格	Trans MOSFET N-CH 400V 5A 3-Pin(3+Tab) TO-220
MTP5N05	MOTOROLA	获取价格	Power Field-Effect Transistor, 5A I(D), 50V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-
MTP5N06	NJSEMI	获取价格	Trans MOSFET N-CH 400V 5A 3-Pin(3+Tab) TO-220
MTP5N06	MOTOROLA	获取价格	5A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP5N06E	NJSEMI	获取价格	Trans MOSFET N-CH 400V 5A 3-Pin(3+Tab) TO-220
MTP5N12	MOTOROLA	获取价格	Power Field-Effect Transistor, 5A I(D), 120V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal
MTP5N20	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR

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