Datasheet > MT40A1G8SA-062E AUT

MT40A1G8SA-062E AUT

更新时间： 2024-11-22 14:58:59

品牌	Logo	应用领域
镁光 - MICRON		双倍数据速率
页数	文件大小	规格书
21页	466K
描述
Adding ECC With DDR4 x16 Components

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16Gb: x4, x8 TwinDie DDR4 SDRAM

Description

TwinDie™ 1.2V DDR4 SDRAM

MT40A4G4 – 128 Meg x 4 x 16 Banks x 2 Ranks

MT40A2G8 – 64 Meg x 8 x 16 Banks x 2 Ranks

Options

Marking

Description

The 16Gb (TwinDie™) DDR4 SDRAM uses

• Configuration

– 128 Meg x 4 x 16 banks x 2 ranks

– 64 Meg x 8 x 16 banks x 2 ranks

• FBGA package (Pb-free)

– 78-ball FBGA

(9.5mm x 13mm x 1.2mm) Die Rev :A

– 78-ball FBGA

4G4

2G8

Micron’s 8Gb DDR4 SDRAM die (essentially two ranks

of the 8Gb DDR4 SDRAM). Refer to Micron’s 8Gb

DDR4 SDRAM data sheet for the specifications not in-

cluded in this document. Specifications for base part

number MT40A2G4 correlate to TwinDie manufactur-

ing part number MT40A4G4; specifications for base

part number MT40A1G8 correlate to TwinDie manu-

facturing part number MT40A2G8.

FSE

NRE

(8.0mm x 12mm x 1.2mm) Die Rev :B

• Timing – cycle time¹

– 0.750ns @ CL = 18 (DDR4-2666)

– 0.833ns @ CL = 16 (DDR4-2400)

– 0.833ns @ CL = 17 (DDR4-2400)

– 0.937ns @ CL = 15 (DDR4-2133)

– 0.937ns @ CL = 16 (DDR4-2133)

• Self refresh

-075E

-083E

-083

-093E

-093

Features

• Uses 8Gb Micron die

• Two ranks (includes dual CS#, ODT, and CKE balls)

• Each rank has 4 groups of 4 internal banks for con-

current operation

• V_DD= V_DDQ= 1.2V (1.14–1.26V)

• 1.2V V_DDQ-terminated I/O

• JEDEC-standard ball-out

– Standard

None

• Operating temperature

– Commercial (0°C ≤ T_C≤ 95°C)

• Revision

None

• Low-profile package

• T_Cof 0°C to 95°C

– 0°C to 85°C: 8192 refresh cycles in 64ms

– 85°C to 95°C: 8192 refresh cycles in 32ms

1. CL = CAS (READ) latency.

Note:

Table 1: Key Timing Parameters

Data Rate

Speed Grade

-075E¹

(MT/s)

2666

2400

2133

Target ^tRCD-^tRP-CL

^tRCD (ns)

13.5

^tRP (ns)

13.5

CL (ns)

13.5

18-18-18

16-16-16

17-17-17

15-15-15

16-16-16

-083E²

13.32

14.16

14.06

13.32

14.16

14.06

13.32

14.16

14.06

-083²

-093E

-093

1. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; and 2400, CL = 17.

2. Backward compatible to 2133, CL = 15 (-093E).

Notes:

PDF: 09005aef85fd40a1

DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...21

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与MT40A1G8SA-062E AUT相关器件

型号	品牌	获取价格	描述	数据表
MT40A1G8SA-062E IT	MICRON	获取价格	8Gb: x4, x8, x16 DDR4 SDRAM
MT40A1G8SA-075	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A1G8WE-075E	MICRON	获取价格	Refresh time of 8192-cycle at TC temperature range
MT40A1G8WE-083E	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A1G8WE-083E IT	MICRON	获取价格	8Gb: x4, x8, x16 DDR4 SDRAM
MT40A1G8WE-083EAAT	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A1G8Z11BW	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16GE-062E	MICRON	获取价格	4Gb: x4, x8, x16 DDR4 SDRAM
MT40A256M16GE-075E	MICRON	获取价格	Temperature controlled refresh (TCR)
MT40A256M16GE-075E AAT	MICRON	获取价格	MT40A512M8, MT40A256M16

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