Datasheet > MT40A256M16GE-075E AAT

MT40A256M16GE-075E AAT

更新时间： 2024-11-19 15:17:47

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
384页	11123K
描述
MT40A512M8, MT40A256M16

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4Gb: x8, x16 Automotive DDR4 SDRAM

Features

Automotive DDR4 SDRAM

MT40A512M8, MT40A256M16

Options¹

Marking

Features

• V_DD= V_DDQ= 1.2V ±±60V

• V_PP= 2.5V –1250V/+2560V

• On-die, internal, adjustable V_REFDQgeneration

• 1.2V pseudo open-drain I/O

• Refresh 0axi0u0 interval ti0e at T_Cte0perature

range:

– ±40s at –46°C to 85°C

– 320s at 85°C to 95°C

– 1±0s at 9±°C to 165°C

– 80s at 16±°C to 125°C

• 1± internal banks ( x8): 4 groups of 4 banks each

• 8 internal banks (x1±): 2 groups of 4 banks each

• 8n-bit prefetch architecture

• Progra00able data strobe prea0bles

• Data strobe prea0ble training

• Co00and/Address latency (CAL)

• Multipurpose register read and write capability

• Write leveling

• Configuration

– 512 Meg x 8

– 25± Meg x 1±

512M8

25±M1±

• BGA package (Pb-free) – x8

– 78-ball (900 x 16.500) – Rev. B

– 78-ball (7.500 x 1100) – Rev. F

• FBGA package (Pb-free) – x1±

– 9±-ball (900 x 1400) – Rev. B

– 9±-ball (7.500 x 13.500) – Rev. F

• Ti0ing – cycle ti0e

– 6.±25ns @ CL = 22 (DDR4-3266)

– 6.756ns @ CL = 18 (DDR4-2±±±)

– 6.833ns @ CL = 1± (DDR4-2466)

• Auto0otive grade

SA, AG

LY, AD

-6±2E

-675E

-683E

– AEC-Q166

– PPAP

• Operating te0perature

– Industrial (–46°C ≤ T_C≤ +95°C)

– Auto0otive (–46°C ≤ T_C≤ +165°C)

– Ultra-high (–46°C ≤ T_C≤ +125°C)³

– Revision

:B :F

• Self refresh 0ode

• Low-power auto self refresh (LPASR)

• Te0perature controlled refresh (TCR)

• Fine granularity refresh

• Self refresh abort

• Maxi0u0 power saving

• Output driver calibration

• No0inal, park, and dyna0ic on-die ter0ination

(ODT)

• Data bus inversion (DBI) for data bus

• Co00and/Address (CA) parity

• Databus write cyclic redundancy check (CRC)

• Per-DRAM addressability

1. Not all options listed can be combined to

define an offered product. Use the part cat-

alog search on http://www.micron.com for

available offerings.

Notes:

2. The ×4 device is not offered and the mode

is not supported by the x8 or x16 device

even though some ×4 mode descriptions ex-

ist in the datasheet.

3. The UT option use based on automotive us-

age model. Please contact Micron sales rep-

resentative if you have questions.

• Connectivity test

4. -062E is only available for die Rev. F.

• Hard post package repair (hPPR) and soft post

package repair (sPPR) 0odes

• JEDEC JESD-79-4 co0pliant

Table 1: Key Timing Parameters

Speed Grade

-062E¹

Data Rate (MT/s)

Target CL-nRCD-nRP

^tAA (ns)

13.75

^tRCD (ns)

13.75

^tRP (ns)

13.75

13.5

3200

2666

2400

22-22-22

18-18-18

16-16-16

-075E¹

13.5

-083E

13.32

1. Refer to the Speed Bin Tables for backward compatibility

Note:

CCMTD-1725822587-10418

4gb_auto_ddr4_sdram_z90b_z10B.pdf - Rev. L 03/2021 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...384

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与MT40A256M16GE-075E AAT相关器件

型号	品牌	获取价格	描述	数据表
MT40A256M16GE-075E AIT	MICRON	获取价格	MT40A512M8, MT40A256M16
MT40A256M16GE-075EAIT	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A256M16GE-075EAUT	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A256M16GE-083E AAT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16GE-083E AUT	MICRON	获取价格	MT40A512M8, MT40A256M16
MT40A256M16LY-062E	MICRON	获取价格	4Gb: x4, x8, x16 DDR4 SDRAM
MT40A256M16LY-062E AAT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16LY-062E AIT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16LY-062E AUT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16LY-062E IT	MICRON	获取价格	Adding ECC With DDR4 x16 Components

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