Datasheet > MT40A256M16LY-062E

MT40A256M16LY-062E

更新时间： 2024-11-19 15:19:31

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
390页	11632K
描述
4Gb: x4, x8, x16 DDR4 SDRAM

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4Gb: x4, x8, x16 DDR4 SDRAM

Features

DDR4 SDRAM

MT40A1G4

MT40A512M8

MT40A256M16

Options¹

Marking

Features

• V_DD= V_DDQ= 1.2V ±±60V

• V_PP= 2.5V, –1250V/+2560V

• On-die, internal, adjustable V_REFDQgeneration

• 1.2V pseudo open-drain I/O

• Configuration

– 1 Gig x 4

– 512 Meg x 8

– 25± Meg x 1±

1G4

512M8

25±M1±²

• FBGA package (Pb-free) – x4, x8

– 78-ball (900 x 11.500) – Rev. A

– 78-ball (900 x 16.500) – Rev. B

– 78-ball (800 x 1200) – Rev. E

– 78-ball (7.500 x 1100) – Rev. F,G

• FBGA package (Pb-free) – x1±

– 9±-ball (900 x 1400) – Rev. A

– 9±-ball (900 x 1400) – Rev. B

– 9±-ball (7.500 x 13.500) – Rev. E, F

– 9±-ball (7.500 x 1300) – Rev. G

• Ti0ing – cycle ti0e

– 6.±25ns @ CL = 22 (DDR4-3266)

– 6.±82ns @ CL = 26 (DDR4-2933)

– 6.±82ns @ CL = 21 (DDR4-2933)

– 6.756ns @ CL = 18 (DDR4-2±±±)

– 6.756ns @ CL = 19 (DDR4-2±±±)

– 6.833ns @ CL = 1± (DDR4-2466)

– 6.833ns @ CL = 17 (DDR4-2466)

– 6.937ns @ CL = 15 (DDR4-2133)

– 6.937ns @ CL = 1± (DDR4-2133)

– 1.671ns @ CL = 13 (DDR4-18±±)

• Operating te0perature

• T_C0axi0u0 up to 95°C

– ±40s, 8192-cycle refresh up to 85°C

– 320s, 8192-cycle refresh at >85°C to 95°C

• 1± internal banks (x4, x8): 4 groups of 4 banks each

• 8 internal banks (x1±): 2 groups of 4 banks each

• 8n-bit prefetch architecture

• Progra00able data strobe prea0bles

• Data strobe prea0ble training

• Co00and/Address latency (CAL)

• Multipurpose register READ and WRITE capability

• Write leveling

-6±2E

-6±8E

-6±8

-675E

-675

-683E

-683

-693E

-693

• Self refresh 0ode

• Low-power auto self refresh (LPASR)

• Te0perature controlled refresh (TCR)

• Fine granularity refresh

• Self refresh abort

• Maxi0u0 power saving

• Output driver calibration

• No0inal, park, and dyna0ic on-die ter0ination

(ODT)

• Data bus inversion (DBI) for data bus

• Co00and/Address (CA) parity

• Databus write cyclic redundancy check (CRC)

• Per-DRAM addressability

-167E

– Co00ercial (6° ื T_Cื 95°C)

– Industrial (–46° ื T_Cื 95°C)

– Revision

None

• Connectivity test

• sPPR and hPPR capability

• JEDEC JESD-79-4 co0pliant

1. Not all options listed can be combined to

define an offered product. Use the part

catalog search on http://www.micron.com

for available offerings.

Notes:

2. Not available on Rev. A.

3. Restricted and limited availability.

CCMTD-1725822587-9046

4gb_ddr4_dram.pdf - Rev. M 03/2020 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...390

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与MT40A256M16LY-062E相关器件

型号	品牌	获取价格	描述	数据表
MT40A256M16LY-062E AAT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16LY-062E AIT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16LY-062E AUT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16LY-062E IT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16LY-075	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A2G16SKL-062E	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A2G16TBB-062E	MICRON	获取价格	16Gb: x4, x8, x16 DDR4 SDRAM, MT40A4G4SA-062E
MT40A2G4	MICRON	获取价格	Programmable data strobe preambles
MT40A2G4PM-083E	MICRON	获取价格	Programmable data strobe preambles
MT40A2G4SA-062E	MICRON	获取价格	Adding ECC With DDR4 x16 Components

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