Datasheet > MT40A1G8WE-083E

MT40A1G8WE-083E

更新时间： 2024-11-22 01:04:07

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
358页	11412K
描述
Automotive DDR4 SDRAM

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MT40A1G8WE-083E 数据手册

8Gb: x8, x16 Automotive DDR4 SDRAM

Features

Automotive DDR4 SDRAM

MT40A1G8

MT40A512M16

Options¹

Marking

Features

• V_DD= V_DDQ= 1.2V ±±60V

• V_PP= 2.5V –1250V/+2560V

• On-die, internal, adjustable V_REFDQgeneration

• 1.2V pseudo open-drain I/O

• Refresh ti0e of 8192-cycle at T_Cte0perature range:

– ±40s at –46°C to 85°C

• Configuration

– 1 Gig x 8

– 512 Meg x 1±

1G8

512M1±

• 78-ball FBGA package (Pb-free) – x8

– 800 x 1200 – Rev. B

• 9±-ball FBGA package (Pb-free) – x1±

– 800 x 1400 – Rev. B

• Ti0ing – cycle ti0e

– 6.756ns @ CL = 18 (DDR4-2±±±)

– 6.833ns @ CL = 1± (DDR4-2466)

• Product certification

– Auto0otive

• Operating te0perature

– Industrial (–46° T_C 95°C)

– Auto0otive (–46° T_C 165°C)

– Ultra-high (–46° T_C 125°C)³

– Revision

– 320s at 85°C to 95°C

– 1±0s at 95°C to 165°C

– 80s at 165°C to 125°C

-675E

-683E

• 1± internal banks (x4, x8): 4 groups of 4 banks each

• 8 internal banks (x1±): 2 groups of 4 banks each

• 8n-bit prefetch architecture

• Progra00able data strobe prea0bles

• Data strobe prea0ble training

• Co00and/Address latency (CAL)

• Multipurpose register read and write capability

• Write and read leveling

• Self refresh 0ode

1. Not all options listed can be combined to

define an offered product. Use the part

catalog search on http://www.micron.com

for available offerings.

Notes:

• Low-power auto self refresh (LPASR)

• Te0perature controlled refresh (TCR)

• Fine granularity refresh

• Self refresh abort

• Maxi0u0 power saving

• Output driver calibration

2. The data sheet does not support ×4 mode

even though ×4 mode description exists in

the following sections.

3. The UT option use based on automotive us-

age model. Please contact Micron sales rep-

resentative if you have questions.

• No0inal, park, and dyna0ic on-die ter0ination

(ODT)

• Data bus inversion (DBI) for data bus

• Co00and/Address (CA) parity

• Databus write cyclic redundancy check (CRC)

• Per-DRAM addressability

• Connectivity test (x1±)

• JEDEC JESD-79-4 co0pliant

• sPPR and hPPR capability

• AEC-Q166

• PPAP sub0ission

• 8D response ti0e

CCMTD-1406124318-10419

8gb_auto_ddr4_dram.pdf - Rev. C 3/17 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...358

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与MT40A1G8WE-083E相关器件

型号	品牌	获取价格	描述	数据表
MT40A1G8WE-083E IT	MICRON	获取价格	8Gb: x4, x8, x16 DDR4 SDRAM
MT40A1G8WE-083EAAT	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A1G8Z11BW	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16GE-062E	MICRON	获取价格	4Gb: x4, x8, x16 DDR4 SDRAM
MT40A256M16GE-075E	MICRON	获取价格	Temperature controlled refresh (TCR)
MT40A256M16GE-075E AAT	MICRON	获取价格	MT40A512M8, MT40A256M16
MT40A256M16GE-075E AIT	MICRON	获取价格	MT40A512M8, MT40A256M16
MT40A256M16GE-075EAIT	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A256M16GE-075EAUT	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A256M16GE-083E AAT	MICRON	获取价格	Adding ECC With DDR4 x16 Components

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