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MT28F160A3 PDF预览

MT28F160A3

更新时间： 2024-09-17 22:45:51
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
28页 335K
描述
FLASH MEMORY

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MT28F160A3 数据手册

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‡
ADVANCE  
1 MEG x 16  
ENHANCED BOOT BLOCK FLASH MEMORY  
FLASH MEMORY  
MT28F160A3  
Low Voltage, Extended Temperature  
FEATURES  
• Thirty-nine erase blocks:  
BALL ASSIGNMENT (Top View)  
46-Ball FBGA  
Two 4K-word boot blocks (protected)  
Six 4K-word parameter blocks  
Thirty-one 32K-word main memory blocks  
• VCC, VCCQ and VPP voltages:  
2.7V–3.3V VCC and VPP  
1
2
3
4
5
6
7
8
2.7V–3.3V VCCQ*  
5V VPP fast programming voltage  
• Address access times:  
90ns, 110ns at 2.7V–3.3V  
• Low power consumption:  
Standby and deep power-down mode < 1µA  
(typical ICC)  
Automatic power saving feature (APS mode)  
• Enhanced WRITE/ERASE SUSPEND (1µs typical)  
• Industry-standard command set compatibility  
• Hardware block protection  
A13  
A11  
A8  
V
PP  
WP#  
A19  
A7  
A4  
A
B
C
D
E
A14  
A15  
A16  
A10  
A12  
WE#  
A9  
RP#  
A18  
A17  
A6  
A5  
A3  
A2  
A1  
A0  
DQ14  
DQ15  
DQ7  
DQ5  
DQ6  
DQ13  
DQ2  
DQ3  
DQ8  
DQ9  
DQ10  
CE#  
DQ0  
DQ1  
DQ11  
DQ12  
DQ4  
VCC  
Q
VSS  
VSS  
VCC  
OE#  
F
OPTIONS  
• Timing  
NUMBER  
(Ball Down)  
90ns access  
110ns access  
-9  
-11  
NOTE: See page 3 for Ball Description Table.  
• Boot Block Starting Address  
Top (FFFFFH)  
See last page for mechanical drawing.  
T
B
Bottom (00000H)  
• Package  
accomplished by using high voltage which can be sup-  
plied on a separate line.  
46-ball FBGA (6 x 8 ball grid)  
FD  
• Temperature Range  
The embedded WORD WRITE and BLOCK ERASE  
functions are fully automated by an on-chip write state  
machine (WSM), which simplifies these operations and  
relieves the system processor of secondary tasks. The  
WSM status can be monitored by an on-chip status  
registertodeterminetheprogressofprogram/erasetasks.  
Please refer to Micron’s Web site (www.micron.com/  
flash) for the latest data sheet.  
Commercial (0°C to +70°C)  
Extended (-40°C to +85°C)  
None  
ET  
*Lower VCCQ ranges are available upon request.  
Part Number Example:  
MT28F160A3FD-11 TET  
GENERAL DESCRIPTION  
DEVICE MARKING  
The MT28F160A3 is a nonvolatile, electrically block-  
erasable (flash), programmable, read-only memory con-  
taining 16,777,216 bits organized as 1,048,576 words  
(16 bits).  
Due to the size of the package, Micron’s standard part  
number is not printed on the top of each device. Instead,  
an abbreviated device mark comprised of a five-digit  
alphanumericcodeisused.Theabbreviateddevicemarks  
are cross referenced to Micron part numbers in  
Table 1.  
TheMT28F160A3ismanufacturedon0.22µmprocess  
technology in a 48-ball FBGA package. The device has an  
I/O supply of 2.7V (MIN). Programming in production is  
1 Meg x 16 Enhanced Boot Block Flash Memory  
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01  
©2001, Micron Technology, Inc.  
1
‡
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND  
ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET  
MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.  
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