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MT28F160C3 PDF预览

MT28F160C3

更新时间： 2024-09-17 22:45:51
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
28页 339K
描述
FLASH MEMORY

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MT28F160C3 数据手册

 浏览型号MT28F160C3的Datasheet PDF文件第2页浏览型号MT28F160C3的Datasheet PDF文件第3页浏览型号MT28F160C3的Datasheet PDF文件第4页浏览型号MT28F160C3的Datasheet PDF文件第5页浏览型号MT28F160C3的Datasheet PDF文件第6页浏览型号MT28F160C3的Datasheet PDF文件第7页 
‡
ADVANCE  
1 MEG x 16  
3V ENHANCED+ BOOT BLOCK FLASH MEMORY  
FLASH MEMORY  
MT28F160C3  
Low Voltage, Extended Temperature  
FEATURES  
• Thirty-nine erase blocks:  
BALL ASSIGNMENT (Top View)  
46-Ball FBGA  
Eight 4K-word parameter blocks  
Thirty-one 32K-word main memory blocks  
• VCC, VCCQ and VPP voltages:  
2.7V–3.3V VCC  
1
2
3
4
5
6
7
8
2.7V–3.3V VCCQ*  
1.65V–3.3V and 12V VPP  
• Address access times:  
90ns, 110ns at 2.7V–3.3V  
• Low power consumption:  
A13  
A11  
A8  
VPP  
WP#  
A19  
A7  
A4  
A
B
C
D
E
A14  
A15  
A16  
VCCQ  
VSS  
A10  
A12  
WE#  
A9  
RP#  
A18  
A17  
A6  
A5  
A3  
A2  
A1  
Standby and deep power-down mode < 1µA  
(typical ICC)  
DQ14  
DQ15  
DQ7  
DQ5  
DQ6  
DQ13  
DQ2  
DQ3  
VCC  
DQ8  
DQ9  
DQ10  
CE#  
DQ0  
DQ1  
A0  
DQ11  
DQ12  
DQ4  
Automatic power saving feature (APS mode)  
• Enhanced WRITE/ERASE SUSPEND (1µs typical)  
• 128-bit OTP area for security purposes  
• Industry-standard command set compatibility  
• Software/hardware block protection  
VSS  
OE#  
F
(Ball Down)  
OPTIONS  
• Timing  
NUMBER  
NOTE: See page 3 for Ball Description Table.  
See last page for mechanical drawing.  
90ns access  
110ns access  
-9  
-11  
• Boot Block Starting Address  
Top (FFFFFH)  
has an I/O supply of 2.7V (MIN). Programming in pro-  
duction is accomplished by using high voltage which can  
be supplied on a separate line.  
T
B
Bottom (00000H)  
The embedded WORD WRITE and BLOCK ERASE  
functions are fully automated by an on-chip write state  
machine (WSM), which simplifies these operations and  
relieves the system processor of secondary tasks. The  
WSM status can be monitored by an on-chip status reg-  
ister to determine the progress of program/erase tasks.  
The device is equipped with 128 bits of one time  
programmable (OTP) area. The soft protection feature  
forblockswillmarkthemasread-onlybyconfiguringsoft  
protection registers with command sequences.  
Please refer to Micron’s Web site (www.micron.com/  
flash) for the latest data sheet.  
• Package  
46-ball FBGA (6 x 8 ball grid)  
FD  
• Temperature Range  
Commercial (0°C to +70°C)  
Extended (-40°C to +85°C)  
None  
ET  
*Lower VCCQ ranges are available upon request.  
Part Number Example:  
MT28F160C3FD-11 TET  
GENERAL DESCRIPTION  
DEVICE MARKING  
The MT28F160C3 is a nonvolatile, electrically block-  
erasable (flash), programmable, read-only memory con-  
taining 16,777,216 bits organized as 1,048,576 words (16  
bits).  
Due to the size of the package, Micron’s standard part  
number is not printed on the top of each device. Instead,  
an abbreviated device mark comprised of a five-digit  
alphanumericcodeisused.Theabbreviateddevicemarks  
are cross referenced to Micron part numbers in Table 1.  
The MT28F160C3 is manufactured on 0.22µm pro-  
cess technology in a 48-ball FBGA package. The device  
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory  
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01  
©2001, Micron Technology, Inc.  
1
‡
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND  
ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET  
MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.  
1234567...28

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