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MT28F160C34 PDF预览

MT28F160C34

更新时间： 2024-02-24 16:41:29
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
28页 339K
描述
FLASH MEMORY

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MT28F160C34 数据手册

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‡
ADVANCE  
1 MEG x 16  
3V ENHANCED+ BOOT BLOCK FLASH MEMORY  
FLASH MEMORY  
MT28F160C34  
FEATURES  
• Thirty-nine erase blocks:  
BALL ASSIGNMENT (Top View)  
46-Ball FBGA  
Eight 4K-word parameter blocks  
Thirty-one 32K-word main memory blocks  
• VCC, VCCQ and VPP voltages:  
3.3V ±5% VCC  
3.3V ±5% VCCQ  
1.65V–3.465V and 12V VPP  
1
2
3
4
5
6
7
8
• Address access times:  
A13  
A11  
A8  
V
PP  
WP#  
A19  
A7  
A4  
A
B
C
D
E
90ns at 3.3V ±5%  
• Low power consumption:  
Standby and deep power-down mode < 1µA  
(typical ICC)  
Automatic power saving feature (APS mode)  
• Enhanced WRITE/ERASE SUSPEND (1µs typical)  
• 128-bit OTP area for security purposes  
• Industry-standard command set compatibility  
• Software/hardware block protection  
A14  
A15  
A16  
A10  
A12  
WE#  
A9  
RP#  
A18  
A17  
A6  
A5  
A3  
A2  
A1  
A0  
DQ14  
DQ15  
DQ7  
DQ5  
DQ6  
DQ13  
DQ2  
DQ3  
DQ8  
DQ9  
DQ10  
CE#  
DQ0  
DQ1  
DQ11  
DQ12  
DQ4  
V
CC  
Q
VSS  
V
SS  
V
CC  
OE#  
F
OPTIONS  
• Timing  
NUMBER  
90ns access  
-9  
(Ball Down)  
• Boot Block Starting Address  
Top (FFFFFh)  
T
B
NOTE: See page 3 for Ball Description Table.  
Bottom (00000h)  
See last page for mechanical drawing.  
• Package  
46-ball FBGA (6 x 8 ball grid)  
FD  
ET  
• Temperature Range  
WSM status can be monitored by an on-chip status reg-  
ister to determine the progress of program/erase tasks.  
The device is equipped with 128 bits of one time  
programmable (OTP) area. The soft protection feature  
forblockswillmarkthemasread-onlybyconfiguringsoft  
protection registers with command sequences.  
Extended (-40ºC to +85ºC)  
Part Number Example:  
MT28F160C34FD-9 TET  
GENERAL DESCRIPTION  
The MT28F160C34 is a nonvolatile, electrically block-  
erasable (flash), programmable memory containing  
16,777,216 bits organized as 1,048,576 words (16 bits).  
The MT28F160C34 is manufactured on 0.22µm process  
technology in a 46-ball FBGA package.  
The embedded WORD WRITE and BLOCK ERASE  
functions are fully automated by an on-chip write state  
machine (WSM), which simplifies these operations and  
relieves the system processor of secondary tasks. The  
ARCHITECTURE  
The MT28F160C34 flash contains eight 4K-word  
parameter blocks and thirty-one 32K-word blocks.  
Memory is organized by using a blocked architecture to  
allow independent erasure of selected memory blocks.  
Any address within a block address range selects that  
block for the required READ, WRITE, or ERASE operation  
(see Figure 1).  
1Megx163VEnhanced+BootBlockFlashMemory  
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01  
©2001,MicronTechnology,Inc.  
1
‡PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE  
BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.  
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