Datasheet > MT28F008B3WG-9BET

MT28F008B3WG-9BET

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
30页	413K
描述
FLASH MEMORY

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MT28F008B3WG-9BET 数据手册

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8Mb

SMART 3 BOOT BLOCK FLASH MEMORY

FLASH MEMORY

MT28F008B3

MT28F800B3

3V Only, Dual Supply (Smart 3)

FEATURES

• Eleven erase blocks:

40-Pin TSOP Type I 48-Pin TSOP Type I

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Eight main memory blocks

• Smart 3 technology (B3):

3.3V ±0.3V V^CC

3.3V ±0.3V VPP application programming

5V ±10% VPP application/production programming¹

• Compatible with 0.3µm Smart 3 device

• Advanced 0.18µm CMOS floating-gate process

• Address access time: 90ns

• 100,000 ERASE cycles

• Industry-standard pinouts

44-Pin SOP

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• TSOP, SOP and FBGA packaging options

•

Byte- or word-wide READ and WRITE

(MT28F800B3):

1 Meg x 8/512K x 16

OPTIONS

• Timing

MARKING

90ns access

-9

GENERAL DESCRIPTION

• Configurations

1 Meg x 8

The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are

low-voltage, nonvolatile, electrically block-erasable (flash),

programmable memory devices containing 8,388,608 bits

organized as 524,288 words (16 bits) or 1,048,576 bytes (8

bits). Writing and erasing the device is done with a VPP

voltage of either 3.3V or 5V, while all operations are

performed with a 3.3V VCC. Due to process technology

advances, 5V VPP is optimal for application and production

programming. These devices are fabricated with Micron’s

advanced 0.18µm CMOS floating-gate process.

MT28F008B3

MT28F800B3

512K x 16/1 Meg x 8

• Boot Block Starting Word Address

Top (7FFFFh)

Bottom (00000h)

• Operating Temperature Range

Commercial (0ºC to +70ºC)

Extended (-40ºC to +85ºC)

None

• Packages

The MT28F008B3 and MT28F800B3 are organized

into eleven separately erasable blocks. To ensure that

critical firmware is protected from accidental erasure or

overwrite, the devices feature a hardware-protected

boot block. This block may be used to store code imple-

mented in low-level system recovery. The remaining

blocks vary in density and are written and erased with

no additional security measures.

40-pin TSOP Type I (MT28F008B3)

48-pin TSOP Type I (MT28F800B3)

44-pin SOP (MT28F800B3)

NOTE:

1. This generation of devices does not support 12V VPP

production programming; however, 5V VPP application

production programming can be used with no loss of

performance.

Part Number Example:

Refer to Micron’s Web site (www.micron.com/flash)

for the latest data sheet.

MT28F800B3WG-9 BET

8MbSmart3BootBlockFlashMemory

Q10_3.p65 – Rev. 3, Pub. 10/01

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...30

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