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MT28F1284W18 PDF预览

MT28F1284W18

更新时间: 2024-01-26 12:58:34
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
66页 786K
描述
1.8V Low Voltage, Extended Temperature

MT28F1284W18 数据手册

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8 MEG x 16  
ASYNC/PAGE/BURST FLASH MEMORY  
MT28F1284W18  
FLASH MEMORY  
1.8V Lo w Vo lt a g e , Ext e n d e d Te m p e ra t u re  
Fig u re 1: 56-Ba ll VFBGA  
Fe a t u re s  
Dedicated commands to decrease programming times for  
both in-factory and in-system operations  
Fast programming algorithm (FPA) for fast PROGRAM  
operation  
1
2
3
4
5
6
7
8
A11  
A8  
VSS  
VPP  
A6  
A4  
A18  
A
B
C
D
E
F
VCC  
16-word page  
Flexible 8Mb multipartition architecture  
Single word (16-bit) data bus  
Support for true concurrent operation with zero latency  
Basic configuration:  
A12  
A13  
A15  
VCCQ  
VSS  
A9  
A20  
A21  
RST#  
WE#  
DQ12  
DQ2  
A5  
A7  
A3  
A2  
A17  
A19  
CLK  
ADV#  
A16  
A10  
A14  
WAIT#  
DQ6  
A22  
CE#  
DQ0  
DQ8  
A1  
WP#  
DQ1  
DQ9  
VCCQ  
135 individually programmable/ erasable blocks  
16 partitions (8Mb each for code and data storage)  
DQ15  
DQ14  
VSSQ  
A0  
DQ4  
DQ11  
VCC  
Operating Voltage  
DQ13  
DQ5  
DQ10  
DQ3  
OE#  
VSSQ  
VCC = 1.70V (MIN)–1.95V (MAX)  
VCCQ = 1.70V (MIN)–2.24V (MAX)  
DQ7  
G
VPP = 1.8V (TYP) for in-system PROGRAM/ ERASE  
12V ±5% (HV) VPP tolerant (factory programming  
compatibility)  
Top View  
Random access time: 60ns @ 1.70V VCC  
Burst mode read access  
NOTE:  
1. See Table 3 for ball descriptions.  
2. See Figure 35 for mechanical drawing.  
MAX clock rate: 66 MHz (tCLK = 15ns)  
MAX clock rate: 54 MHz (tCLK = 18.5ns)  
Burst latency 60ns @1.70V VCC and 66 MHz  
4 word, 8 word, 16 word, and continuous burst modes  
tACLK: 14ns @ 1.70V VCC and 54 MHz  
tACLK: 11ns @ 1.70V VCC and 66 MHz  
Op t io n s  
Timing  
Ma rkin g  
Page mode read access  
-60  
-70  
60ns access  
70ns access  
Interpage read access: 60ns @ 1.70V VCC  
Intrapage read access: 15ns @ 1.70V VCC  
Burst Frequency  
Low power consumption (VCC = 1.95V)  
5
6
54 MHz  
Burst read @ 66 MHz <10mA (TYP)  
Standby < 50µA(TYP)  
Automatic power save (APS)  
66 MHz1  
Boot Block Configuration  
Top  
Bottom  
T
B
Enhanced program and erase suspend options  
ERASE-SUSPEND-to-READ within same partition  
PROGRAM-SUSPEND-to-READ within same  
partition  
Package  
56-ball VFBGA (Standard) 7 x 8 ball  
grid  
FQ  
BQ  
ERASE-SUSPEND-to-PROGRAM within same  
partition  
56-ball VGBGA (Lead-free) 7 x 8 ball  
grid2  
Dual 64-bit chip protection registers for security purposes  
Cross-compatible command support  
Operating Temperature Range  
Extended (-40ºC to +85ºC)  
ET  
Extended command set  
Common flash interface  
NOTES: 1. Contact factory for availability.  
2. Contact factory for details.  
Programmable WAIT# configuration  
Clock suspend  
100,000 ERASE cycles per block  
Part Number Example:  
MT28F1284W18FQ-705 TET  
09005aef80b425b4  
MT28F1284W18_D.fm - Rev. D, 11/03 EN  
1
©2003 Micron Technology, Inc. All rights reserved.  
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY  
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.  

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