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MT28F016S5VG-9 PDF预览

MT28F016S5VG-9

更新时间: 2024-01-19 05:59:41
品牌 Logo 应用领域
镁光 - MICRON 闪存
页数 文件大小 规格书
24页 282K
描述
2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

MT28F016S5VG-9 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:10 X 20 MM, PLASTIC, TSOP1-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.76最长访问时间:90 ns
其他特性:DEEP POWER DOWN; USER CONFIGURABLE 5V OR 12V VPP命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:32端子数量:40
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):235电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:NO
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

MT28F016S5VG-9 数据手册

 浏览型号MT28F016S5VG-9的Datasheet PDF文件第2页浏览型号MT28F016S5VG-9的Datasheet PDF文件第3页浏览型号MT28F016S5VG-9的Datasheet PDF文件第4页浏览型号MT28F016S5VG-9的Datasheet PDF文件第5页浏览型号MT28F016S5VG-9的Datasheet PDF文件第6页浏览型号MT28F016S5VG-9的Datasheet PDF文件第7页 
ADVANCE  
2 MEG x 8  
SMART 5 EVEN-SECTORED FLASH MEMORY  
FLASH MEMORY  
MT28F016S5  
5V Only, Dual Supply (Smart 5)  
FEATURES  
• Thirty-two 64KB erase blocks  
• Deep Power-Down Mode:  
10µA MAX  
PIN ASSIGNMENT (Top View)  
40-Pin TSOP Type I  
• Smart 5 technology:  
5V ±10% VCC  
5V ±10% VPP application/production  
programming  
12V VPP tolerant compatibility production  
programming  
A19  
A18  
A17  
A16  
A15  
A14  
A13  
A12  
CE#  
1
2
3
4
5
6
7
8
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
A20  
NC  
WE#  
OE#  
RY/BY#  
DQ7  
DQ6  
DQ5  
DQ4  
• Address access time: 90ns  
• Industry-standard pinouts  
• Inputs and outputs are fully TTL-compatible  
• Automated write and erase algorithm  
• Two-cycle WRITE/ERASE sequence  
9
V
CC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
VCC  
VSS  
VSS  
V
PP  
RP#  
A11  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
OPTIONS  
• Timing  
MARKING  
DQ3  
DQ2  
DQ1  
DQ0  
A0  
A1  
A2  
A3  
90ns access  
-9  
• Package  
Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG  
PartNumberExample:  
MT28F016S5VG-9  
GENERAL DESCRIPTION  
The MT28F016S5 is a nonvolatile, electrically block-  
erasable(flash),programmable,read-onlymemorycon-  
taining 2,097,152 bytes (8 bits). Writing or erasing the  
device is done with a 5V VPP voltage, while all opera-  
tions are performed with a 5V VCC. Due to process  
technology advances, 5V VPP is optimal for application  
and production programming. For backward compat-  
ibility with SmartVoltage technology, 12V VPP is sup-  
ported for a maximum of 100 cycles and may be  
connected for up to 100 cumulative hours. The device  
is fabricated with Micron’s advanced CMOS floating-  
gate process.  
The MT28F016S5 is organized into 32 separately  
erasable blocks. ERASEs may be interrupted to allow  
other operations with the ERASE SUSPEND command.  
After the ERASE SUSPEND command is issued, READ  
operations may be executed.  
Operations are executed with commands from an  
industry-standard command set. In addition to status  
register polling, the MT28F016S5 provides a ready/  
busy# (RY/BY#) output to indicate WRITE and ERASE  
completion.  
PleaserefertoMicron’sWebsite(www.micron.com/  
flash/htmls/datasheets.html) for the latest data sheet.  
2 Meg x 8 Smart 5 Even-Sectored Flash Memory  
F42.p65 – Rev. 1/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2000, Micron Technology, Inc.  
1

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