Datasheet > MSCSM120DAM31CTBL1NG-Module

MSCSM120DAM31CTBL1NG-Module

更新时间： 2023-12-06 20:11:44

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	776K
描述
'? SiC Power MOSFET- Low RDS(on)- High temperature performance? Kelvin source for easy drive? Very

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MSCSM120DAM31CTBL1NG-Module 数据手册

MSCSM120DAM31CTBL1NG

Boost Chopper SiC MOSFET Power Module

Product Overview

The MSCSM120DAM31CTBL1NG device is a 1200 V, 79 A boost chopper silicon carbide (SiC) MOSFET power

module.

+VBUS

OUT

0/VBUS

All ratings at T_J= 25 °C, unless otherwise specified.

Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

DS00004079A-page 1

Datasheet

and its subsidiaries

12 3 4 5 6 7...16

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