Datasheet > MSCDC200A170D1PAG-Module

MSCDC200A170D1PAG-Module

更新时间： 2023-12-06 20:02:43

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
9页	806K
描述
SiC Schottky DiodeZero reverse recoveryZero forward recoveryTemperature Independent switching beha

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MSCDC200A170D1PAG-Module 数据手册

Electrical Speciﬁcations

Symbol

Characteristic

Test Conditions

V_R= 900 V

Min

Typ

Max

Unit

Q_C

Total capacitive charge

Total capacitance

1640

1200

1000

f = 1 MHz, V_R= 600 V

f = 1 MHz, V_R= 900 V

R_thJC

Junction-to-case thermal resistance

0.092

°C/W

3.3

Performance Curves

This section shows the typical performance curves for the MSCDC200A170D1PAG device.

Figure 1 • Maximum Thermal Impedance

Figure 2 • Forward Characteristics

Figure 3 • Capacitance vs. Reverse Voltage

Microsemi Proprietary and Conﬁdential MSCDC200A170D1PAG Datasheet Revision 1.0

1...4 5 678 9

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