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MSCDC200KK70D1PAG PDF预览

MSCDC200KK70D1PAG

更新时间: 2024-11-20 19:45:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网测试二极管
页数 文件大小 规格书
6页 699K
描述
Rectifier Diode,

MSCDC200KK70D1PAG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:MODULE-3Reach Compliance Code:compliant
风险等级:5.73应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.8 VJESD-30 代码:R-XUFM-X3
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-40 °C最大输出电流:200 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:700 V
最大反向电流:800 µA反向测试电压:700 V
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

MSCDC200KK70D1PAG 数据手册

 浏览型号MSCDC200KK70D1PAG的Datasheet PDF文件第2页浏览型号MSCDC200KK70D1PAG的Datasheet PDF文件第3页浏览型号MSCDC200KK70D1PAG的Datasheet PDF文件第4页浏览型号MSCDC200KK70D1PAG的Datasheet PDF文件第5页浏览型号MSCDC200KK70D1PAG的Datasheet PDF文件第6页 
MSCDC200KK70D1PAG Dual Common Cathode SiC Diodes Power  
Module  
1
Product Overview  
This section shows the product overview of the MSCDC200KK70D1PAG device.  
All ratings at Tj = 25 °C, unless otherwise specified.  
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be  
followed.  
MSCC-0344-DS-01034-1.0-0719 MSCDC200KK70D1PAG Datasheet Revision 1.0  
1

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