Datasheet > MSCGL40X120T3AG-Module

MSCGL40X120T3AG-Module

更新时间： 2024-11-21 14:53:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	344K
描述
IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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MSCGL40X120T3AG-Module 数据手册

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MSCGL40X120T3AG

V_CES= 1200V

3 Phase bridge

IGBT4 Power Module

I_C= 40A @ Tc = 100°C

Application

Motor control



Features



IGBT 4

Low voltage drop

Low leakage current

Low switching losses

Low tail current



Kelvin emitter for easy drive

Very low stray inductance

Internal thermistor for temperature monitoring

AlN substrate for improved thermal performance

It is recommended to connect a decoupling capacitor

between pins 31 & 2 to reduce switching overvoltages, if DC

Power is connected between pins 15, 16 & 12.

Pins 15 & 16 must be shorted together.

Benefits



Outstanding performance at high frequency

operation



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

RoHS compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

1200

±20

T_C= 25°C

T_C= 100°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

Pulsed Collector Current

Gate – Emitter Voltage

T_C= 25°C

P_D

Power Dissipation

312

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

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