Datasheet > MSCGLQ75H120CTBL3NG-Module

MSCGLQ75H120CTBL3NG-Module

更新时间： 2023-12-06 20:03:04

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
14页	437K
描述
'? High speed IGBT 4? Kelvin emitter for easy drive? Very low stray inductance? Ultra low weight and profile? High efficiency converter? Direct mounting to heatsink (isolated package)? Low junction to case thermal resistance? RoHS Complia

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MSCGLQ75H120CTBL3NG-Module 数据手册

MSCGLQ75H120CTBL3NG

Full Bridge High-Speed IGBT4 Power Module

Product Overview

The MSCGLQ75H120CTBL3NG device is a 1200 V/75 A full bridge high-speed IGBT4 power module.

E1 G1

G3 E3

+VBUS1

+VBUS2

0/VBUS1

0/VBUS2

OUT1

OUT2

E2 G2

T2 T1

G4 E4

All ratings at T_J= 25 °C, unless otherwise specified.

Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

DS00004109A-page 1

Datasheet

and its subsidiaries

12 3 4 5 6 7...14

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