Datasheet > MSCGTQ100HD65C1AG-Module

MSCGTQ100HD65C1AG-Module

更新时间： 2023-12-06 20:09:29

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	316K
描述
High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow leakage cur

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MSCGTQ100HD65C1AG-Module 数据手册

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MSCGTQ100HD65C1AG

V_CES= 650V

I_C= 100A @ Tc = 60°C

Power Factor Correction

High speed IGBT 5 Power Module

Application



Power factor correction

Features



High speed IGBT 5

Low voltage drop

Low tail current

Switching frequency up to 100 kHz

Low leakage current



SiC Schottky Diode

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF



Kelvin emitter for easy drive

Very low stray inductance

AlN substrate for improved thermal performance

Benefits



Stable temperature behavior

Very rugged

Solderable terminals for easy PCB mounting

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

Low profile

Pins : 4/5 ; 7/8 ; 9/10 ; 1/2 must be shorted together

RoHS Compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

650

100

200

±20

330

T_C= 60°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

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