Datasheet > MSCGLQ50H120CTBL2NG-Module

MSCGLQ50H120CTBL2NG-Module

更新时间： 2023-12-06 20:10:47

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
14页	372K
描述
'? High speed IGBT 4? Kelvin emitter for easy drive? Very low stray inductance? Ultra low weight and profile? High efficiency converter? Direct mounting to heatsink (isolated package)? Low junction to case thermal resistance? RoHS Complia

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MSCGLQ50H120CTBL2NG-Module 数据手册

MSCGLQ50H120CTBL2NG

Full Bridge High-Speed IGBT4 Power Module

Product Overview

The MSCGLQ50H120CTBL2NG device is a 1200 V/50 A full bridge high-speed IGBT4 power module.

+VBUS2 G3 E3

0/VBUS2

E4 G4

OUT2

+VBUS1

G1 E1

0/VBUS1

E2 G2

OUT1

All ratings at T_J= 25 °C, unless otherwise specified.

Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

DS00004104A-page 1

Datasheet

and its subsidiaries

12 3 4 5 6 7...14

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