Datasheet > MSB-709RT1G

MSB-709RT1G

更新时间： 2024-11-25 12:36:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
4页	39K
描述
PNP General Purpose Amplifier Transistor Surface Mount

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中文翻译

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数据手册

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MSB-709RT1G 数据手册

MSB709−RT1

Preferred Device

PNP General Purpose

Amplifier Transistor

Surface Mount

Features

http://onsemi.com

• Pb−Free Package is Available

COLLECTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Collector − Base Voltage

Collector − Emitter Voltage

Emitter − Base Voltage

Collector Current − Continuous

Collector Current − Peak

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

−60

Unit

Vdc

(BR)CBO

(BR)CEO

(BR)EBO

−45

Vdc

BASE

EMITTER

−7.0

−100

−200

Vdc

mAdc

MARKING

DIAGRAM

C(P)

Symbol

Max

200

Unit

°C

SC−59

CASE 318D

AR M G

Power Dissipation

Junction Temperature

150

Storage Temperature

stg

−55 ~ +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

= Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

June, 2005 − Rev. 6

MSB709−RT1/D

12 3 4

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