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MSASC25H45KV PDF预览

MSASC25H45KV

更新时间: 2024-11-29 06:13:11
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 95K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN

MSASC25H45KV 数据手册

 浏览型号MSASC25H45KV的Datasheet PDF文件第2页 
8700 E. Thomas Road  
Scottsdale, AZ 85252  
PH: (480) 941-6300  
FAX: (480) 941-1503  
MSASC25H45K  
MSASC25H45KR  
Features  
ꢀꢁ Tungsten/Platinum schottky barrier for very low VF  
ꢀꢁ Oxide passivated structure for very low leakage currents  
ꢀꢁ Guard ring protection for increased reverse energy capability  
ꢀꢁ Epitaxial structure minimizes forward voltage drop  
ꢀꢁ Hermetically sealed, low profile ceramic surface mount power package  
ꢀꢁ Low package inductance  
45 Volts  
25 Amps  
ꢀꢁ Very low thermal resistance  
LOW VOLTAGE  
DROP SCHOTTKY  
DIODE  
ꢀꢁ Available as standard polarity (strap is anode:MSASC25H45K) and  
reverse polarity (strap is cathode:MSASC25H45KR)  
ꢀꢁ TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening  
i.a.w. Microsemi Internal Procedure PS11.50 available  
Maximum Ratings @ 25C (unless otherwise specified)  
DESCRIPTION  
SYMBOL  
MAX.  
UNIT  
Peak Repetitive Reverse Voltage  
VRRM  
VRWM  
VR  
IF(ave)  
dIF/dT  
IFSM  
IRRM  
Tj  
Tstg  
45  
45  
45  
25  
(3.3)  
280  
2
Volts  
Volts  
Volts  
Amps  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Average Rectified Forward Current, Tc145C  
derating, forward current, Tc145C  
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave  
Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz  
Junction Temperature Range  
Storage Temperature Range  
Thermal Resistance, Junction to Case:  
Amps/C  
Amps  
Amp  
-55 to +150  
-55 to +150  
0.85  
C  
C  
C/W  
MSASC25H45K  
MSASC25H45KR  
JC  
0.95  
Mechanical Outline  
ThinKey™2  
Datasheet# MSC1458B  

MSASC25H45KV 替代型号

型号 品牌 替代类型 描述 数据表
1N6815 MICROSEMI

完全替代

LOW VOLTAGE DROP SCHOTTKY DIODE
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