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1N6815 PDF预览

1N6815

更新时间: 2024-11-27 22:34:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 肖特基二极管
页数 文件大小 规格书
2页 79K
描述
LOW VOLTAGE DROP SCHOTTKY DIODE

1N6815 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:S-CSSO-G1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
其他特性:LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:S-CSSO-G1JESD-609代码:e0
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:1
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:25 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N6815 数据手册

 浏览型号1N6815的Datasheet PDF文件第2页 
2830 S. Fairview St.  
Santa Ana, CA 92704  
PH: (714) 979-8220  
FAX: (714) 966-5256  
1N6815  
(MSASC25H45K)  
1N6815R  
Features  
Tungsten/Platinum schottky barrier for very low VF  
Oxide passivated structure for very low leakage currents  
Guard ring protection for increased reverse energy capability  
Epitaxial structure minimizes forward voltage drop  
Hermetically sealed, low profile ceramic surface mount power package  
Low package inductance  
(MSASC25H45KR)  
45 Volts  
25 Amps  
Very low thermal resistance  
Available as standard polarity (strap is anode: 1N6815) and reverse  
polarity (strap is cathode: 1N6815R)  
LOW VOLTAGE  
DROP SCHOTTKY  
DIODE  
TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening  
i.a.w. Microsemi Internal Procedure PS11.50 available  
Maximum Ratings @ 25 C (unless otherwise specified)  
°
DESCRIPTION  
SYMBOL  
MAX.  
UNIT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Average Rectified Forward Current, Tc145°C  
derating, forward current, Tc145°C  
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave  
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz  
Junction Temperature Range  
Storage Temperature Range  
45  
45  
45  
25  
(3.3)  
Volts  
Volts  
Volts  
Amps  
Amps/°C  
Amps  
Amp  
°C  
°C  
VRRM  
VRWM  
VR  
IF(ave)  
dIF/dT  
IFSM  
IRRM  
Tj  
Tstg  
θJC  
125  
2
-55 to +150  
-55 to +150  
Thermal Resistance, Junction to Case:  
1N6815  
1N6815R  
1.25  
1.35  
°C/W  
Mechanical Outline  
ThinKey™2  
Datasheet# MSC1458A August, 2000  

1N6815 替代型号

型号 品牌 替代类型 描述 数据表
MSASC25H45KV MICROSEMI

完全替代

Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, HERMETIC SEALED,

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