Datasheet > MSASC75W45FVR

MSASC75W45FVR

更新时间： 2024-11-29 10:08:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	90K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 75A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC PACKAGE-1

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MSASC75W45FVR 数据手册

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

MSASC75W45F

MSASC75W45FR

Features

•

Platinum schottky barrier

Oxide passivated structure for low leakage currents

Guard ring protection for increased reverse energy capability

Epitaxial structure minimizes forward voltage drop

Hermetically sealed, low profile ceramic surface mount power package

Low package inductance

Very low thermal resistance

Available as standard polarity (strap is anode: MSASC75W45F) and

reverse polarity (strap is cathode: MSASC75W45FR)

45 Volts

75 Amps

LOW LEAKAGE

CURRENT

SCHOTTKY DIODE

•

TXV-level (MSASC75W45FV) and S-level (MSASC75W45FS) screening

i.a.w. Microsemi Internal Procedure PS11.50 are available

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤ 125°C

derating, forward current, Tc≥ 125°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz

Junction Temperature Range

V_RRM

V_RWM

V_R

I_F(ave)

dI_F/dT

I_FSM

I_RRM

T_j

T_stg

500

Volts

Amps

Amps/°C

Amps

Amp

°C

-55 to +175

0.50

Storage Temperature Range

Thermal Resistance, Junction to Case:

MSASC75W45F

MSASC75W45FR

θ_JC

°C/W

0.65

Mechanical Outline

ThinKey™4

Datasheet# MSC1030B

中文翻译

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