5秒后页面跳转
MSASC25W100KR PDF预览

MSASC25W100KR

更新时间: 2024-11-28 04:14:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管肖特基二极管
页数 文件大小 规格书
2页 80K
描述
LOW REVERSE LEAKAGE SCHOTTKY DIODE

MSASC25W100KR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.43Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.02 V
JESD-30 代码:S-CSSO-G1JESD-609代码:e0
最大非重复峰值正向电流:120 A元件数量:1
相数:1端子数量:1
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:25 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MSASC25W100KR 数据手册

 浏览型号MSASC25W100KR的Datasheet PDF文件第2页 
2830 S. Fairview St.  
Santa Ana, CA 92704  
PH: (714) 979-8220  
FAX: (714) 966-5256  
1N6817  
MSASC25W100K)  
1N6817R  
(
Features  
Tungsten schottky barrier  
Oxide passivated structure  
Guard ring protection for increased reverse energy capability  
Epitaxial structure minimizes forward voltage drop  
Hermetically sealed, low profile ceramic surface mount power package  
Low package inductance  
Very low thermal resistance  
Available as standard polarity (strap is anode: 1N6817) and reverse  
polarity (strap is cathode: 1N6817R)  
TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)  
screening i.a.w. Microsemi internal procedure PS11.50 available  
(
MSASC25W100KR)  
100 Volts  
25 Amps  
LOW REVERSE  
LEAKAGE  
SCHOTTKY DIODE  
Maximum Ratings @ 25 C (unless otherwise specified)  
°
DESCRIPTION  
SYMBOL  
MAX.  
UNIT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Average Rectified Forward Current, Tc145°C  
derating, forward current, Tc145°C  
VRRM  
VRWM  
VR  
IF(ave)  
dIF/dT  
100  
100  
100  
25  
Volts  
Volts  
Volts  
Amps  
(3.3)  
Amps/°C  
120  
2
-55 to +175  
-55 to +175  
Amps  
Amp  
°C  
°C  
°C/W  
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave  
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz  
Junction Temperature Range  
IFSM  
IRRM  
Tj  
Tstg  
θJC  
Storage Temperature Range  
Thermal Resistance, Junction to Case:  
1N6817  
1N6817R  
1.25  
1.35  
Mechanical Outline  
ThinKey™2  
Datasheet# MSC1034B August, 2000  

与MSASC25W100KR相关器件

型号 品牌 获取价格 描述 数据表
MSASC25W100KRS MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, HERMETIC SEALED,
MSASC25W100KRV MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, HERMETIC SEALED,
MSASC25W100KS MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, HERMETIC SEALED,
MSASC25W100KV MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, HERMETIC SEALED,
MSASC25W45K MICROSEMI

获取价格

LOW LEAKAGE SCHOTTKY DIODE
MSASC25W45KR MICROSEMI

获取价格

LOW LEAKAGE SCHOTTKY DIODE
MSASC75H45F MICROSEMI

获取价格

LOW VOLTAGE DROP SCHOTTKY DIODE
MSASC75H45FR MICROSEMI

获取价格

LOW VOLTAGE DROP SCHOTTKY DIODE
MSASC75W100F MICROSEMI

获取价格

LOW REVERSE LEAKAGE SCHOTTKY DIODE
MSASC75W100FR MICROSEMI

获取价格

LOW REVERSE LEAKAGE SCHOTTKY DIODE